代表论文：
1.Xue-Peng Wang, Xian-Bin Li, Nian-Ke Chen, Bin Chen, Feng Rao, Shengbai Zhang, Phase-change-memory process at the limit: a proposal for utilizing monolayer Sb2Te3, Advanced Science 8, 2004185 (2021).
2.Xue-Peng Wang, Xian-Bin Li, Nian-Ke Chen, Junhyeok Bang, Qi-Dai Chen, Hong-Bo Sun, Shengbai Zhang, Time-dependent density-functional theory molecular-dynamics study on amorphization of Sc-Sb-Te alloy under optical excitation, npj Compututational Materials 6, 31 (2020).
3.Xue-Peng Wang, Xian-Bin Li, Nian-Ke Chen, Qi-Dai Chen, Xiao-Dong Han, Shengbai Zhang, Hong-Bo Sun, Element-specific amorphization of vacancy-ordered GeSbTe for ternary-state phase change memory, Acta Materialia 136, 242-248 (2017).
4.Ran Ding#,Xue-Peng Wang#, Jing Feng, Xian-Bin Li, Feng-Xi Dong, Wei-Quan Tian, Jia-Ren Du, Hong-Hua Fang, Hai-Yu Wang, Takeshi Yamao, Shu Hotta, Hong-Bo Sun, Clarification of the molecular doping mechanism in organic single-crystalline semiconductors and their application in color-tunable light-emitting devices, Advanced Materials 30, 1801078 (2018).
5.Bin Chen#,Xue-Peng Wang#,Fangying Jiao, Long Ning, Jiaen Huang, Jiatao Xie, Shengbai Zhang, Xian-Bin Li, Feng Rao, Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow-Drift Phase-Change Memory Applications, Advanced Science,2301043 (2023).DOI: 10.1002/advs.202301043
6.Xue-Peng Wang, Kun Liu, Jianzhong Wu, Demystifying the Stern layer at a metal-electrolyte interface: Local dielectric constant, specific ion adsorption, and partial charge transfer, Journal of Chemical Physics 154, 124701 (2021).
7.Xue-Peng Wang, Gary M.C. Ong, Michael Naguib, Jianzhong Wu, Theoretical insights into MXene termination and surface charge regulation, Journal of Physical Chemistry C 125, 21771 (2021).
8.Xue-Peng Wang, Nian-Ke Chen, Xian-Bin Li, Yan Cheng, X. Q. Liu, Meng-Jiao Xia, Z. T. Song, X. D. Han, S. B. Zhang, Hong-Bo Sun, Role of the nano amorphous interface in the crystallization of Sb2Te3 towards non-volatile phase change memory: insights from first principles, Physical Chemistry Chemical Physics 16 10810-10815 (2014).
9.Xue-Peng Wang, Xian-Bin Li, Nian-Ke Chen, Ji-Hong Zhao, Qi-Dai Chen, Hong-Bo Sun, Electric field analyses on monolayer semiconductors: the example of InSe,Physical Chemistry Chemical Physics20, 6945-6949 (2018).
10.Xue-Peng Wang, Yu-Ting Liu, Yong-Jin Chen, Nian-Ke Chen, Xian-Bin Li, Nano amorphous interface in phase-change memory materials: structure, property and design, Journal of Physics D: Applied Physiscs 53, 114002 (2020).
11.Bin Zhang#,Xue-Peng Wang#, Zhen-Ju Shen, Xian-Bin Li, Chuan-Shou Wang, Yong-Jin Chen, Ji-Xue Li, Jin-Xing Zhang, Ze Zhang, Sheng-Bai Zhang, Xiao-Dong Han, Vacancy structures and melting behavior in rock-salt GeSbTe, Scitific Report 6, 25453 (2016).
12.Chun-Hao Li#,Xue-Peng Wang#, Ji-Hong Zhao, De-Zhong Zhang, Xin-Yue Yu, Xian-Bin Li, Jing Feng, Qi-Dai Chen, Sheng-Ping Ruan, Hong-Bo Sun, Black silicon IR photodiode supersaturated with nitrogen by femtosecond laser irradiation, IEEE Sensor Journal 18, 3595 (2018).
13.Simon Fleischmann, Yuan Zhang,Xue-Peng Wang, Peter T Cummings, Jianzhong Wu, Patrice Simon, Yury Gogotsi, Volker Presser, Veronica Augustyn, Continuous transition from double-layer to Faradaic charge storage in confined electrolytes, Nature Energy 7, 222 (2022).
