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饶峰职务： 职称：教授 办公电话：0755-86713963 EMAIL：fengrao@szu.edu.cn |
饶峰，博士，腾讯创始人团队冠名特聘教授（2020），国家优青（2016），深圳市国家级领军人才（2018）。在Science、Nat. Commun.、Chem.Mater.、Nano Energy、NPG Asia Mater.、Nano Res.等知名期刊发表第一作者及通讯作者署名SCI论文50余篇，总SCI论文110余篇；获中国授权发明专利40余项（美国专利3项），其中第一发明人授权专利8项（美国专利2项）。曾获得中科院院长优秀奖、中科院优秀博士学位论文奖、全国百篇优秀博士论文提名奖、上海市青年科技启明星、中科院青年创新促进会首批会员、中科院卢嘉锡青年人才奖等荣誉。主持国家自然科学基金重点项目、中国科学院战略性先导科技专项（A类）子课题、国家自然科学基金优秀青年科学基金项目、国家自然科学基金青年科学基金项目、上海市青年科技启明星计划项目、广东省基础重大研究项目、广东省区域联合基金重点项目、深圳市基础研究学科布局、自由探索项目各一项；作为研究骨干，参加国家重大科学研究计划项目（A类）、国家科技重大专项项目等四项。
研究兴趣
1、相变信息存储材料、机理与器件
2、透射电镜原位外场作用下纳米材料行为
3、硫系非晶态半导体材料阈值转变机制
4、二维、异质结、超晶格薄膜材料与器件
发表论文：
114. Yangyang Du, Zhigang Wang, Xiangze Ai, Tianying Sun, Yang Huang, Xierong Zeng, Xian Chen*, Feng Rao*, Feng Wang*. Visible-to-Ultraviolet Light Conversion: Materials and Applications. Advanced Photonics Research in press (2021).
113. Keyuan Ding, Tianci Li, Bin Chen, Feng Rao*. Reliable 2D phase transitions for low-noise and long-life memory programming. Frontiers in Nanotechnology in press (2021).
112. Xue-Peng Wang, Xian-Bin Li*, Nian-Ke Chen*, Bin Chen, Feng Rao, Shengbai Zhang*. Phase-Change-Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3. Adv. Sci. in press (2021).
111. Keyuan Ding, Bin Chen, Yimin Chen, Junqiang Wang, Xiang Shen, Feng Rao*. Recipe for Ultrafast and Persistent Phase-Change Memory Materials. NPG Asia Mater. 12, 63 (2020). (DOI: 10.1038/s41427-020-00246-z).
110. Peifeng Li, Ke Cao, Libo Gao, Weibing Liao, Jiabin Liu, Xu Sun*, Hongtao Wang*, Feng Rao*, Yang Lu. Cold Welding Assisted Self-healing of Fractured Ultrathin Au Nanowires. Nano Express 1, 020014 (2020). (DOI: 10.1088/2632-959X/aba684).
109. Peifeng Li*, Weibing Liao, Lijie Yue, Zhanxi Fan*, Feng Rao*. Key factors affecting Rayleigh instability of ultrathin 4H hexagonal gold nanoribbons. Nanoscale Adv. 2, 3027–3032 (2020). (DOI: 10.1039/d0na00186d).
108. Fangying Jiao, Bin Chen, Keyuan Ding, Kunlong Li, Lei Wang, Xierong Zeng, Feng Rao*. Monatomic 2D phase-change memory for precise neuromorphic computing. Appl. Mater. Today 20, 100641 (2020). (DOI: 10.1016/j.apmt.2020.100641).
107. Zhenhan Zhang, Zongwei Wang, Tuo Shi, Chong Bi, Feng Rao*, Yimao Cai*, Qi Liu*, Huaqiang Wu*, Peng Zhou*. Memory materials and devices: from concept to application. InfoMat 2, 261–290 (2020). (DOI: 10.1002/inf2.12077).
106. Bin Chen, Yimin Chen, Keyuan Ding, Kunlong Li, Fangying Jiao, Lei Wang, Xierong Zeng, Junqiang Wang, Xiang Shen, Wei Zhang,Feng Rao*, Evan Ma. Kinetics features conducive to cache-type non-volatile phase-change memory. Chem. Mater. 31, 8794–8800 (2019). (DOI: 10.1021/acs.chemmater.9b02598).
105. Keyuan Ding, Jiangjing Wang, Yuxing Zhou, He Tian, Lu Lu, Riccardo Mazzarello, Chunlin Jia, Wei Zhang*, Feng Rao*, Evan Ma*. Phase-change heterostructure enables ultralow noise and drift for memory operation. Science 366, 210–215 (2019). (DOI: 10.1126/science.aay0291).
104. Tingting Jiang, Jiangjing Wang, Lu Lu, Chuansheng Ma, Danli Zhang, Feng Rao, Chunlin Jia, Wei Zhang*. Progressive amorphization of GeSbTe phase-change material under electron beam irradiation. APL Mater. 7, 081121 (2019). (DOI: 10.1063/1.5102075).
103. Ying Liu, Luoyuan Xie, Wang Zhang, Ziwen Dai, Wei Wei, Shaojuan Luo, Xian Chen, Wei Chen, Feng Rao, Lei Wang, Yang Huang*. A Conjugated System of PEDOT:PSS Induced Self-doped PANI for Flexible Zinc-Ion Batteries with Enhanced Capacity and Cyclability. ACS Appl. Mater. Interfaces 11(34), 30943–30952 (2019). (DOI: 10.1021/acsami.9b09802).
102. Feng Rao*, Wei Zhang*, Evan Ma*. Catching structural transitions in liquids. Science 364, 1032–1033 (2019). (DOI: 10.1126/science.aax6333).
101. Getasew M. Zewdie, Yuxing Zhou, Liang Sun, Feng Rao, Volker L. Deringer, Riccardo Mazzarello, Wei Zhang*. Chemical Design Principles for Cache-Type Sc-Sb-Te Phase-Change Memory Materials. Chem. Mater. 31, 4008–4015 (2019). (DOI: 10.1021/acs.chemmater.9b00510).
100. Xiaoyan Wei, Hailu Wang, Ying Wang, Shuangyang Kuang, Xiaoxiao Zhu, Jizhao Zou, Lei Wang, Xierong Zeng, Feng Rao*, Guang Zhu*. Fully-integrated motion-driven electroluminescence enabled by triboelectrification for customized flexible display. Nano Energy 61, 158–164 (2019). (DOI: 10.1016/j.nanoen.2019.04.005).
99. Fei Han, Shaojuan Luo, Luoyuan Xie, Jiajie Zhu, Wei Wei, Xian Chen*, Fuwei Liu, Wei Chen*, Jinlai Zhao, Lei Dong, Kuai Yu, Xierong Zeng, Feng Rao, Lei Wang, Yang Huang*. Boosting the Yield of MXene 2D Sheets via a Facile Hydrothermal-Assisted Intercalation. ACS Appl. Mater. Interfaces 11(8), 8443–8452 (2019). (DOI: 10.1021/acsami.8b22339).
98. Feng Rao*, Wei Zhang*. More on phase-change materials for data storage. Physics Today 71(12), 13-13 (2018). (DOI: 10.1063/PT.3.4082).
97. Feng Rao*, Keyuan Ding, Yuxing Zhou, Yonghui Zheng, Mengjiao Xia, Shilong Lv, Zhitang Song*, Songlin Feng, Ider Ronneberger, Riccardo Mazzarello, Wei Zhang*, Evan Ma. Reducing the stochasticity of crystal nucleation to enable sub-nanosecond memory writing. Science 358, 1423–1427 (2017). (DOI: 10.1126/science.aao3212).
96. Jiajie Zhu, Alexander Chroneos, Lei Wang, Feng Rao*, Udo Schwingenschlögl*. Stress-enhanced lithiation in MAX compounds for battery application. Applied Materials Today 9: 192–195 (2017). (DOI: 10.1016/j.apmt.2017.07.002).
95. Yonghui Zheng, Yan Cheng*, Rong Huang, Ruijuan Qi, Feng Rao*, Keyuan Ding, Weijun Yin, Sannian Song, Weili Liu, Zhitang Song, Songlin Feng. Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film. Sci. Rep. 7, 5915 (2017). (DOI:10.1038/s41598-017-06426-2).
94. Guangyu, Liu, Liangcai Wu*, Min Zhu, Zhitang Song, Feng Rao, Sannian Song, Yan Cheng. The investigations of characteristics of Sb2Te as a base phase-change material. Solid-State Electron. 9(135), 31–36 (2017). (DOI: 10.1016/j.sse.2017.06.004).
93. Keyuan Ding, Feng Rao*, Shilong Lv, Yan Cheng, Liangcai Wu, Zhitang Song. Low-Energy Amorphization of Ti1Sb2Te5 Phase Change Alloy Induced by TiTe2 Nano-Lamellae. Sci. Rep. 6, 30645 (2016). (DOI: 10.1038/srep30645).
92. Yonghui Zheng, Mengjiao Xia, Yan Cheng*, Feng Rao*, Keyuan Ding, Weili Liu, Yu Jia, Zhitang Song*, Songlin Feng. Direct observation of metastable face-centered cubic Sb2Te3 crystal. Nano Res. 9, 3453–3462 (2016). (DOI: 10.1007/s12274-016-1221-8).
91. Keyuan Ding, Feng Rao*, Mengjiao Xia*, Zhitang Song, Liangcai Wu, Songlin Feng. The impact of W doping on the phase change behavior of Sb2Te3. J. Alloys Compd. 688, 22–26 (2016). (DOI: 10.1016/j.jallcom.2016.07.186).
90. Chengqiu Zhu, Jun Ma, Xiaoming Ge, Feng Rao*, Keyuan Ding, Shilong Lv, Liangcai Wu, Zhitang Song. Low-energy phase change memory with graphene confined layer. Appl. Phys. Lett. 108, 252102 (2016). (DOI: 10.1063/1.4953769).
89. Liangliang Cao, Liangcai Wu*, Wenqing Zhu*, Xinglong Ji, Yonghui Zheng, Zhitang Song, Feng Rao, Sannian Song, Zhongyuan Ma, Ling Xu. High thermal stable and fast switching Ni-Ge-Te alloy for phase change memory applications. Appl. Phys. Lett. 107, 242101 (2015). (DOI: 10.1063/1.4937603).
88. Feng Rao, Zhitang Song*, Yan Cheng, Xiaosong Liu*, Mengjiao Xia, Wei Li, Keyuan Ding, Xuefei Feng, Min Zhu, Songlin Feng. Direct observation of titanium-centered octahedral in titanium–antimony–tellurium phase-change material. Nat. Commun.6, 10040 (2015). (DOI: 10.1038/ncomms10040).
87. Liangliang Cao, Xinglong Ji, Wenqing Zhu*, Qiumin She, Yan Cheng, Zhigao Hu, Shuang Guo, Zhitang Song, Feng Rao, Bo Qian, Liangcai Wu*. Advantage of Ti-Doped Ge2Sb2Te5 Material for Phase Change Memory Applications. ECS Solid State Letters 4(12), P102–P104 (2015). (DOI: 10.1149/2.0081512ssl).
86. Mengjiao Xia, Keyuan Ding, Feng Rao*, Xianbin Li, Liangcai Wu, Zhitang Song. Aluminum-Centered Tetrahedron-Octahedron Transition in Advancing Al-Sb-Te Phase Change Properties. Sci. Rep. 5, 8548 (2015). (DOI: 10.1063/1.4937603).
85. Xinglong Ji; Liangcai Wu*, Liangliang Cao, Min Zhu, Feng Rao, Yonghui Zheng, Wangyang Zhou, Zhitang Song, Songlin Feng. Vanadium doped Sb2Te3 material with modified crystallization mechanism for phase-change memory application. Appl. Phys. Lett. 106, 243103 (2015). (DOI: 10.1063/1.4922505).
84. Min Zhu*, Mengjiao Xia, Zhitang Song*, Yan Cheng, Liangcai Wu, Feng Rao, Sannian Song, Miao Wang, Yegang Lu, Songlin Feng. Understanding the crystallization behavior of as-deposited Ti–Sb–Te alloys through real-time radial distribution functions. Nano Scale 7, 9935–9944 (2015). (DOI: 10.1039/C4NR07408D).
83. Mengjiao Xia, Min Zhu*, Yuchan Wang, Zhitang Song, Feng Rao, Liangcai Wu, Yan Cheng, Sannian Song. Ti–Sb–Te Alloy: A Candidate for Fast and Long-Life Phase-Change Memory. ACS Appl. Mater. Interfaces 7, 7627–7634 (2015). (DOI: 10.1021/acsami.5b00083).
82. Xinglong Ji, Liangcai Wu*, Min Zhu, Feng Rao, Zhitang Song, Zhigao Hu, Shuang Guo, Ling Xu, Xilin Zhou, Songlin Feng. Titanium-induced structure modification for thermal stability enhancement of a GeTeTi phase change material. RSC Advances 5(32), 24966–24974 (2015). (DOI: 10.1039/C4RA11504J).
81. Xinglong Ji, Liangcai Wu*, Wangyang Zhou, Min Zhu, Feng Rao, Zhitang Song, Liangliang Cao, Songlin Feng. High thermal stability Sb3Te-TiN2 material for phase change memory application. Appl. Phys. Lett. 106, 023118 (2015). (DOI: 10.1063/1.4905551).
80. Wangyang Zhou, Liangcai Wu*, Xilin Zhou*, Feng Rao, Zhitang Song*, Dongning Yao, Weijun Yin, Sannian Song, Bo Liu, Bo Qian, Songlin Feng. High thermal stability and low density variation of carbon-doped Ge2Sb2Te5 for phase-change memory application. Appl. Phys. Lett. 105, 243113 (2014). (DOI: 10.1063/1.4904832).
79. Xilin Zhou, Mengjiao Xia, Feng Rao*, Liangcai Wu*, Xianbin Li*, Zhitang Song, Songlin Feng, Hongbo Sun. Understanding Phase-Change Behaviors of Carbon-Doped Ge2Sb2Te5 for Phase-Change Memory Application. ACS Appl. Mater. Interfaces 6, 14207–14214 (2014). (DOI: 10.1021/am503502q).
78. Min Zhu, Mengjiao Xia, Feng Rao*, Liangcai Wu, Xianbin Li*, Zhitang Song*, Xinglong Ji, Shilong Lv, Hongbo Su, Shengbai Zhang, Songling Feng. One order of magnitude faster phase change at reduced power in Ti-Sb-Te. Nat. Commun.5, 4086 (2014). (DOI: 10.1038/ncomms5086).
77. Xinglong Ji, Liangcai Wu*, Shilong Lv, Feng Rao, Min Zhu, Zhitang Song, Xilin Zhou, Songlin Feng. Mass transport in Ti0.5Sb2Te3 phase-change nanobridge. Acta Mater. 73, 48–55 (2014). (DOI: 10.1016/j.actamat.2014.03.067).
76. Keyuan Ding, Kun Ren, Feng Rao*, Zhitang Song,Liangcai Wu, Bo Liu, Songlin Feng. Study on the Cu-doped Ge2Sb2Te5 for low-power phase change memory. Mater. Lett. 125, 143–146 (2014). (DOI: 10.1016/j.matlet.2014.03.180).
75. Kun Ren*, Feng Rao*, Zhitang Song, Shilong Lu, Cheng Peng, Min Zhu, Liangcai Wu, Bo Liu, Songlin Feng. Phase change material W0.04(Sb4Te)0.96 for application in high-speed phase change memory. J. Alloys Compd. 594, 82–86 (2014). (DOI: 10.1016/j.jallcom.2014.01.044).
74. Kun Ren, Mengjiao Xia, Feng Rao*, Zhitang Song, Keyuan Ding, Xinglong Ji, Liangcai Wu, Bo Liu, Songlin Feng. Study on the nitrogen-doped W-Sb-Te material for phase change memory application. Appl. Phys. Lett. 104, 173102 (2014). (DOI: 10.1063/1.4874262).
73. Cheng Peng, Feng Rao*, Liangcai Wu, Zhitang Song, Yifeng Gu, Dong Zhou, Hongjia Song, Pingxiong Yang, Junhao Chu. Homogeneous phase W–Ge–Te material with improved overall phase-change properties for future nonvolatile memory. Acta Mater. 74, 49–57 (2014). (DOI: DOI: 10.1016/j.actamat.2014.03.069).
72. Min Zhu, Liangcai Wu*, Feng Rao*, Zhitang Song, Mengjia Xia, Xinglong Ji, Shilong Lv, Songling Feng. The micro-structure and composition evolution of Ti-Sb-Te alloy during reversible phase transition in phase change memory. Appl. Phys. Lett. 104, 063105 (2014). (DOI: 10.1063/1.4828560).
71. Min Zhu, Liangcai Wu*, Feng Rao*, Zhitang Song, Kun Ren, Xinglong Jia, Sannian Song, Dongning Yao, Songlin Feng. Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications. Appl. Phys. Lett. 104, 053199 (2014). (DOI: 10.1063/1.4863430).
70. Zhonghua Zhang*, Cheng Peng, Sannian Song*, Zhitang Song, Yan Cheng, Kun Ren, Xiaoyun Li, Feng Rao, Bo Liu, Songlin Feng. Characterization of Cu doping on GeTe for phase change memory application. J. Appl. Phys. 114, 244311 (2013). (DOI: 10.1063/1.4851757).
69. Xu Zhang, Bo Liu*, Sannian Song, Dongning Yao, Min Zhu, Feng Rao, Liangcai Wu, Zhitang Song, Songlin Feng. Study on Etching Process and Mechanism of New Phase Change Material Ti0.5Sb2Te3. J. Inorg. Mater. 28(12), 1364–1368 (2013). (DOI: 10.3724/SP.J.1077.2013.13210).
68. Min Zhu, Liangcai Wu*, Feng Rao*, Zhitang Song, Xinglong Jia, Dongning Yao, Yan Cheng, Shilong Lv, Sannian Song, Bo Liu, Ling Xu. The Effect of Titanium Doping on the Structure and Phase Change Characteristics of Sb4Te. J. Appl. Phys. 114, 124302 (2013). (DOI: 10.1063/1.4821769).
67. Dong Zhou*, Liangcai Wu*, Qi Guo*, Cheng Peng, Chengfa He, Zhitang Song, Feng Rao, Yudong Li, Shanbin Xi. High tolerance of proton irradiation of Ge2Sb2Te5 phase change material. J. Alloys Compd. 575, 229–232 (2013). (DOI: 10.1016/j.jallcom.2013.03.246).
66. Zhonghua Zhang*, Sannian Song*, Zhitang Song, Yan Cheng, Feng Rao, Liangcai Wu, Bo Liu, Bomy Chen, Yegang Lu. Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application. Appl. Phys. Lett. 103, 142112 (2013). (DOI: 10.1063/1.4824303).
65. Kun Ren*, Feng Rao*, Zhitang Song, Cheng Peng, Juntao Li, Liangcai Wu, Bo Liu, Songlin Feng. Study on the Thermal Stability Improvement of GeTe by Al Doping. Appl. Phys. Lett. 103, 093111 (2013). (DOI: 10.1063/1.4819839).
64. Xilin Zhou, Liangcai Wu*, Zhitang Song, Yan Cheng, Feng Rao*, Kun Ren, Sannian Song, Bo Liu, Songlin Feng. Nitrogen-doped Sb-rich Si-Sb-Te Phase-change Material for High Performance Phase-change Memory. Acta Mater. 61, 7324–7333 (2013). (DOI: 10.1016/j.actamat.2013.08.038).
63. Xilin Zhou, Liangcai Wu*, Zhitang Song, Feng Rao*, Kun Ren, Cheng Peng, Sannian Song, Bo Liu, Ling Xu, Songlin Feng. Phase transition characteristics of Al-Sb phase change materials for phase change memory application. Appl. Phys. Lett.103, 072114 (2013). (DOI: 10.1063/1.4818662).
62. Kun Ren*, Feng Rao*, Zhitang Song, Liangcai Wu, Mengjiao Xia, Bo Liu, Songlin Feng. Investigation of Al doping on Ge55Te45 for phase change memory application. J. Appl. Phys. 113, 234312 (2013). (DOI: 10.1063/1.4811683).
61. Kun Ren*, Feng Rao*, Zhitang Song, Shilong Lv, Min Zhu, Liangcai Wu, Bo Liu, Songlin Feng. Study on the impact of the initialization process on the phase change memory. Appl. Phys. Lett. 102, 213503 (2013). (DOI: 10.1063/1.4808347).
60. Cheng Peng, Liangcai Wu*, Feng Rao*, Zhitang Song, Shilong Lv, Xilin Zhou, Xiaofeng Du, Yan Cheng, Pingxiong Yang, Junhao Chu. A simple method used to evaluate phase-change materials based on focused-ion beam technique. Appl. Phys. Lett. 102, 203510 (2013). (DOI: 10.1063/1.4807893).
59. Mengjiao Xia, Feng Rao*, Zhitang Song, Kun Ren, Liangcai Wu, Bo Liu, Songlin Feng. An Improvement of the Thermal Stability of SnTe through Nitrogen Doping. Chin. Phys. Lett. 30, 037401 (2013). (DOI: 10.1088/0256-307X/30/3/037401).
58. Dongning Yao, Xilin Zhou*, Liangcai Wu, Zhitang Song, Limin Cheng, Feng Rao, Bo Liu, Songlin Feng. Investigation on nitrogen-doped Ge2Sb2Te5 material for phase-change memory application. Solid-State Electron. 79, 138–141 (2013). (DOI: 10.1016/j.sse.2012.07.020).
57. Limin Cheng*, Liangcai Wu*, Zhitang Song, Feng Rao, Cheng Peng, Dongning Yao, Bo Liu, Ling Xu. Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge2+xSb2Te5 (x=0,1) thin films for phase-change memory. J. Appl. Phys. 113, 044514 (2013). (DOI: 10.1063/1.4789388).
56. Cheng Peng, Pingxiong Yang*, Liangcai Wu*, Zhitang Song, Feng Rao, Sannian Song, Dong Zhou, Junhao Chu. Nitrogen-doped Ge3Te2 materials with self-restricted active region for low power phase-change memory. J. Appl. Phys. 113, 034310 (2013). (DOI: 10.1063/1.4781206).
55. Xilin Zhou, Liangcai Wu*, Zhitang Song, Feng Rao*, Min Zhu, Cheng Peng, Dongning Yao, Sannian Song, Bo Liu, and Songlin Feng. Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application. Appl. Phys. Lett. 101, 102104 (2012). (DOI: 10.1063/1.4757137).
54. Xu Zhang, Bo Liu*, Cheng Peng, Feng Rao, Xilin Zhou, Sannian Song, Liangyong Wang, Yan Cheng, Liangcai Wu, Dongning Yao, Zhitang Song, Songlin Feng. Germanium Nitride as a Buffer Layer for Phase Change Memory. Chin. Phys. Lett. 29, 107201 (2012). (DOI: 10.1088/0256-307X/29/10/107201).
53. Cheng Peng, Liangcai Wu*, Feng Rao*, Zhitang Song, Pingxiong Yang*, Hongjia Song, Kun Ren, Xilin Zhou, Min Zhu, Bo Liu, and Junhao Chu. W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention. Appl. Phys. Lett. 101, 122108 (2012). (DOI: 10.1063/1.4754138).
52. Yegang Lu*, Sannian Song*, Zhitang Song, Liangcai Wu, Aodong He, Yuefeng Gong, Feng Rao, Bo Liu. Superlattice-like electrode for low-power phase-change random access memory. Appl. Phys. Lett. 101, 113104 (2012). (DOI: 10.1063/1.4751258).
51. Liangcai Wu*, Min Zhu, Zhitang Song, Shilong Lv, Xilin Zhou, Cheng Peng, Feng Rao, Sannian Song, Bo Liu, Songlin Feng. Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application. J. Non-Cryst. Solids 358, 2409–2411 (2012). (DOI: 10.1016/j.jnoncrysol.2011.12.087).
50. Cheng Peng, Liangcai Wu*, Zhitang Song, Xilin Zhou, Min Zhu, Feng Rao, Bo Liu, Songlin Feng. Advantages of GeTeN material for phase change memory applications. J. Non-Cryst. Solids358, 2416–2419 (2012). (DOI: 10.1016/j.jnoncrysol.2011.10.026).
49. Cheng Peng, Liangcai Wu*, Feng Rao*, Zhitang Song, Pingxiong Yang, Limin Cheng, Juntao Li, Xilin Zhou, Min Zhu, Bo Liu, Junhao Chu. Improved Thermal Stability and Electrical Properties for Al-Sb-Te Based Phase-Change Memory. ECS Solid State Lett. 1(2) P38–P41 (2012). (DOI: 10.1149/2.014202ssl).
48. Yegang Lu*, Sannian Song*, Zhitang Song, Feng Rao, Liangcai Wu, Min Zhu, Bo Liu, Dongning Yao. Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications. Appl. Phys. Lett. 100, 193114 (2012). (DOI: 10.1063/1.4711811).
47. Yegang Lu*, Sannian Song, Zhitang Song, Wanchun Ren, Yulin Xiong, Feng Rao, Liangcai Wu, Yan Cheng, Bo Liu. Superlattice-like GaSb/Sb2Te3 films for low-power phase change memory. Scripta Mater. 66, 702–705 (2012). (DOI: 10.1016/j.scriptamat.2012.01.013).
46. Min Zhu, Liangcai Wu*, Zhitang Song, Feng Rao, Daolin Cai, Cheng Peng, Xilin Zhou, Kun Ren, Sannian Song, Bo liu, Songlin Feng. Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed. Appl. Phys. Lett. 100, 122101 (2012). (DOI: 10.1063/1.3695036).
45. Limin Cheng*, Liangcai Wu, Zhitang Song, Feng Rao, Cheng Peng, Dongning Yao, Bo Liu. Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memory application. Mater. Lett. 71, 98–100 (2012). (DOI: 10.1016/j.matlet.2011.12.039).
44. Kun Ren*, Feng Rao*, Zhitang Song, Shilong Lv, Yan Cheng, Liangcai Wu, Cheng Peng, Xilin Zhou, Mengjiao Xia, Bo Liu, Songlin Feng. Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application. Appl. Phys. Lett. 100, 052105 (2012). (DOI: 10.1063/1.3680580).
43. Feng Rao*, Zhitang Song, Yan Cheng, Mengjiao Xia, Kun Ren, Liangcai Wu, Bo Liu, Songlin Feng. Investigation of changes in band gap and density of localized states on phase transition for Ge3Sb2Te5 and Si3.5Sb2Te3 materials. Acta Mater. 60, 323–328 (2012). (OI: 10.1016/j.actamat.2011.09.015).
42. Xuelai Li*, Zhimei Sun, Feng Rao, Zhitang Song, Weili Liu, Baisheng Sa. Local atomic structure in molten Si3Sb2Te3 phase change material. Solid State Commun. 152(2), 100–103 (2012). (DOI: 10.1016/j.ssc.2011.10.033).
41. Cheng Peng, Pingxiong Yang*, Liangcai Wu, Zhitang Song, Feng Rao, Jian’an Xu, Xilin Zhou, Min Zhu, Bo Liu, Junhao Chu. N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory. Electrochem. Solid-State Lett. 15(4), H101–H104 (2012). (DOI: 10.1149/2.022204esl).
40. Jian’an Xu*, Feng Rao, Zhitang Song, MengJiao Xia, Cheng Peng, Yifeng Gu, Min Zhu, Liangcai Wu, Bo Liu, Songlin Feng. High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material. Electrochem. Solid-State Lett. 15(3) H59–H61 (2012). (DOI: 10.1149/2.006203esl).
39. Yan Cheng*, Zhitang Song, Yifeng Gu, Sannian Song, Feng Rao, Liangcai Wu, Bo Liu, Songlin Feng. Influence of silicon on the thermally-induced crystallization process of Si-Sb4Te phase change materials. Appl. Phys. Lett. 99, 261914 (2011). (DOI: 10.1063/1.3673281).
38. Yegang Lu*, Sannian Song*, Yuefeng Gong, Zhitang Song, Feng Rao, Liangcai Wu, Bo Liu, Dongning Yao. Ga-Sb-Se material for low-power phase change memory. Appl. Phys. Lett. 99, 243111 (2011). (DOI: 10.1063/1.3669699).
37. Liangcai Wu*, Xilin Zhou, Zhitang Song, Min Zhu, Yan Cheng, Feng Rao, Sannian Song, Bo Liu, Songlin Feng. Sb-rich Si-Sb-Te phase-change material for phase-change random access memory applications. IEEE Trans. Electron. Dev. 58, 4423–4426 (2011). (DOI: 10.1109/TED.2011.2167152).
36. Xilin Zhou, Liangcai Wu*, Zhitang Song, Feng Rao, Kun Ren, Cheng Peng, Bo Liu, Dongning Yao, Songlin Feng, Bomy Chen. Investigation of phase transition behaviors of the nitrogen-doped Sb-rich Si-Sb-Te films for phase-change memory. Thin Solid Films 520, 1155–1159 (2011). (DOI: 10.1016/j.tsf.2011.08.111).
35. Xuelai Li*, Feng Rao, Zhitang Song, Min Zhu, Weili Liu, Zhimei Sun. Instability of nitrogen doped Sb2Te3 for phase change memory application. J. Appl. Phys. 110, 094318 (2011). (DOI: 10.1063/1.3660705).
34. Cheng Peng*, Liangcai Wu, Zhitang Song, Feng Rao, Min Zhu, Xuelai Li, Bo Liu, Limin Cheng, Songlin Feng, Pingxiong Yang, Junhao Chu. Performance improvement of Sb2Te3 phase change material by Al doping. Appl. Surf. Sci. 257, 10667–10670 (2011). (DOI: 10.1016/j.apsusc.2011.07.072).
33. Min Zhu*, Liangcai Wu, Feng Rao, Zhitang Song, Xuelai Li, Cheng Peng, Xilin Zhou, Kun Ren, Dongning Yao, Songlin Feng. N-doped Sb2Te phase change materials for higher data retention. J. Alloys Compd. 509, 10105–10109 (2011). (DOI: 10.1016/j.jallcom.2011.08.050).
32. Xilin Zhou, Liangcai Wu*, Zhitang Song, Feng Rao, Kun Ren, Cheng Peng, Xiaohui Guo, Bo Liu, Songlin Feng. Study on Interface Adhesion between Phase Change Material Film and SiO2 Layer by Nanoscratch Test. Jpn. J. Appl. Phys. 50, 091402 (2011). (DOI: 10.1143/JJAP.50.091402).
31. Cheng Peng*, Liangcai Wu*, Feng Rao, Zhitang Song, Xilin Zhou, Min Zhu, Bo Liu, Dongning Yao, Songlin Feng, Pingxiong Yang, Junhao Chu. Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application. Scripta Mater. 65, 327–330 (2011). (DOI: 10.1016/j.scriptamat.2011.04.033).
30. Cheng Peng, Zhitang Song, Feng Rao*, Liangcai Wu*, Min Zhu, Hongjia Song, Bo Liu, Xilin Zhou, Dongning Yao, Pingxiong Yang, Junhao Chu. Al1.3Sb3Te material for phase change memory application. Appl. Phys. Lett. 99, 043105, 2011. (DOI: 10.1063/1.3616146).
29. Xilin Zhou*, Liangcai Wu*, Zhitang Song, Feng Rao, Yan Cheng, Cheng Peng, Dongning Yao, Sannian Song, Bo Liu, Songlin Feng, Bomy Chen. Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state.Appl. Phys. Lett. 99, 032105 (2011). (DOI: 10.1063/1.3614553).
28. Feng Rao*, Kun Ren, Yifeng Gu, Zhitang Song, Liangcai Wu, Xilin Zhou, Bo Liu, Songlin Feng, Bomy Chen. Nano composite Si2Sb2Te film for phase change memory. Thin Solid Films 519, 5684–5688 (2011). (DOI: 10.1016/j.tsf.2011.03.015).
27. Kun Ren*, Feng Rao, Zhitang Song, Yan Cheng, Liangcai Wu, Xilin Zhou, Yuefeng Gong, Mengjiao Xia, Bo Liu, Songlin Feng. Study on the crystallization behaviors of Si2Sb2Tex materials. Scripta Mater. 64, 685–688 (2011). (DOI: 10.1016/j.scriptamat.2010.12.029).
26. Xuelai Li*, Feng Rao, Zhitang Song, Kun Ren, Weili Liu, Zhimei Sun. Experimental and theoretical study of silicon-doped Sb2Te3 thin films: Structure and phase stability. Appl. Surf. Sci. 257, 4566–4568 (2011). (DOI: 10.1016/j.apsusc.2010.12.017).
25. Feng Rao*, Zhitang Song, Kun Ren, Xilin Zhou, Yan Cheng, Liangcai Wu, Bo Liu. Si-Sb-Te materials for phase change memory applications. Nanotechnology 22, 145702 (2011). (DOI: 10.1088/0957-4484/22/14/145702).
24. Xuelai Li*, Zhimei Sun, Zhitang Song, Feng Rao, Liangcai Wu, Weili Liu. Ab initio study of Sb2SexTe3-x (x=0, 1, 2) phase change materials. Solid State Sci. 13, 131–134 (2011). (DOI: 10.1016/j.solidstatesciences.2010.10.025).
23. Min Zhu*, Liangcai Wu*, Feng Rao, Zhitang Song, Cheng Peng, Xuelai Li, Dongning Yao, Wei Xi, Songlin Feng. Phase Change Characteristics of SiO2 Doped Sb2Te3 Materials for Phase Change Memory Application. Electrochem. Solid-State Lett. 14, H404–H407 (2011). (DOI: 10.1149/1.3610229).
22. Kun Ren*, Feng Rao, Zhitang Song, Liangcai Wu, Xilin Zhou, Mengjiao Xia, Bo Liu, Songlin Feng, Wei Xi, Dongning Yao, Bomy Chen. Si3.5Sb2Te3 Phase Change Material for Low-Power Phase Change Memory Application. Chin. Phys. Lett. 27, 108101 (2010). (DOI: 10.1088/0256-307X/27/10/108101).
21. Liangcai Wu*, Xilin Zhou, Zhitang Song, Jie Lian, Feng Rao, Bo Liu, Sannian Song, Weili Liu, Xuyan Liu, Songlin Feng. 197Au irradiation study of phase-change memory cell with GeSbTe alloy. Phys. Status Solidi A 207, 2395–2398 (2010). (DOI: 10.1002/pssa.201026008).
20. Kun Ren*, Feng Rao, Zhitang Song, Liangcai Wu, Xilin Zhou, Bo Liu, Songlin Feng, Wei Xi, Bomy Chen. Phase Change Memory Cell Using Si2Sb2Te3 Material. Jpn. J. Appl. Phys. 49, 080212 (2010). (DOI: 10.1143/JJAP.49.080212).
19. Xilin Zhou*, LiangcaiWu*, Zhitang Song, Feng Rao, Bo Liu, Dongning Yao, Weijun Yin, Songlin Feng, Bomy Chen. Investigation of Sb-rich Si2Sb2+xTe6 material for phase change random access memory application. Appl. Phys. A 103,1077–1081 (2010). (DOI: 10.1007/s00339-010-6042-0).
18. Liangcai Wu*, Xilin Zhou, Zhitang Song, Yan Liu, Henan Ni, Yuefeng Gong, Feng Rao, Donglin Yao, Bo Liu, Sannian Song Songlin Feng. Study of phase change memory cell with inserting buffer layer. Phys. Status Solidi C 7, 1207–1210 (2010) (DOI: 10.1002/pssc.200982712).
17. Xilin Zhou*, Liangcai Wu, Zhitang Song, Feng Rao, Bo Liu, Dongning Yao, Weijun Yin, Juntao Li, Songlin Feng, Bomy Chen. Si2Sb2Te6 phase change material for low-power phase change memory application. Appl. Phys. Expr. 2, 091401 (2009). (DOI: 10.1143/APEX.2.091401).
16. Feng Rao*, Zhitang Song, Kun Ren, Xuelai Li, Liangcai Wu, Wei Xi, Bo Liu. Sn12Sb88 material for phase change memory. Appl. Phys. Lett. 95, 032105 (2009). (DOI: 10.1063/1.3184787).
15. Liangcai Wu*, Zhitang Song, Feng Rao, Yuefeng Gong, Songlin Feng. Multistate storage through successive phase change and resistive change. Appl. Phys. Lett. 94, 243115 (2009). (DOI: 10.1063/1.3156824).
14. Min Zhong*, Zhitang Song, Bo Liu, Yifeng Chen, Yuefeng Gong, Feng Rao, Songlin Feng, Fuxiong Zhang, Yanghui Xiang. The effect of annealing and chemical mechanical polishing on Ge2Sb2Te5 phase change memory. Scripta Mater. 60, 957–959 (2009). (DOI: 10.1016/j.scriptamat.2009.02.023).
13. Feng Rao*, Zhitang Song, Liangcai Wu, Yuefeng Gong, Songlin Feng, Bomy Chen. Phase Change Memory Cell Based On Sb2Te3/TiN/Ge2Sb2Te5 Sandwich-Structure. Solid-State Electron.53, 276–278 (2009). (DOI: 10.1016/j.sse.2008.12.003).
12. Feng Rao*, Zhitang Song, Yuefeng Gong, LiangcaiWu, Songlin Feng, Bomy Chen. Programming voltage reduction in phase change memory cells with tungsten trioxide bottom heating layer/electrode. Nanotechnology 19, 445706 (2008). (DOI: 10.1088/0957-4484/19/44/445706).
11. L. C. Wu*, Z. T. Song, F. Rao, Y. F. Gong, B. Liu, L. Y. Wang, W. L. Liu, S. L. Feng. Performance improvement of phase-change memory cell with cup-shaped bottom electrode contact. Appl. Phys. Lett. 93, 103107 (2008). (DOI: 10.1063/1.2980029).
10. Feng Rao*, Zhitang Song, Yuefeng Gong, Liangcai Wu, Bo Liu, Songlin Feng, and Bomy Chen. Phase change memory cell using tungsten trioxide bottom heating layer. Appl. Phys. Lett. 92, 223507 (2008). (DOI: 10.1063/1.2939218).
9. Jie Shen*, Bo Liu*, Zhitang Song, Cheng Xu, Feng Rao, Shuang Liang, Songlin Feng, Bomy Chen. Germanium nitride interfacial layer for chalcogenide random access memory applications. Appl. Phys. Expr. 1, 011201 (2008). (DOI: 10.1143/APEX.1.011201).
8. Feng Rao*, Zhitang Song, Ting Zhang, Yuefeng Gong, Liangcai Wu, Songlin Feng, Bomy Chen. Polycrystalline Si-rich SiSbx bottom heating layer for phase change memory.Electrochem. Solid-State Lett. 11, H147–H149 (2008). (DOI: 10.1149/1.2898682).
7. Feng Rao*, Zhitang Song, Liangcai Wu, Songlin Feng, Bomy Chen. Set and reset properties of phase change memory cells with double-layer chalcogenide films (Ge2Sb2Te5 and Sb2Te3). J. Electrochem. Soc. 154, H999–H1003 (2007). (DOI: 10.1149/1.2783777).
6. Liangcai Wu*, Zhitang Song, Bo Liu, Ting Zhang, Feng Rao, Jie Shen, Feng Wang, Songlin Feng. Multiple phase-transition in Ge2Sb2Te5 based phase change memory cell by current–voltage measurement. J. Non-Cryst. Solids 353, 4043–4047 (2007). (DOI: 10.1016/j.jnoncrysol.2007.06.039).
5. Feng Rao*, Zhitang Song, Liangcai Wu, Bo Liu, Songlin Feng, Bomy Chen. Investigation on the stabilization of the median resistance state for phase change memory cell with doublelayer chalcogenide films. Appl. Phys. Lett. 91, 123511 (2007). (DOI: 10.1063/1.2787968).
4. Feng Rao*, Zhitang Song, Liangcai Wu, Min Zhong, Songlin Feng, Bomy Chen. Phase change memory cell with an upper amorphous nitride silicon germanium heating layer. Appl. Phys. Lett. 91, 073505 (2007). (DOI: 10.1063/1.2771053).
3. Liangcai Wu*, Zhitang Song, Bo Liu, Feng Rao, Cheng Xu, Ting Zhang, Weijun Yin, Songlin Feng. Remarkable resistance change in plasma oxidized TiOx/TiNx film for memory application. Chin. Phys. Lett. 24, 1103–1105 (2007). (DOI: 10.1088/0256-307X/24/4/070).
2. Ting Zhang*, Zhitang Song, Feng Rao, Gaoming Feng, Bo Liu, Songlin Feng, Bomy Chen. High speed chalcogenide random access memory based on Si2Sb2Te5. Jpn. J. Appl. Phys. 46, L247–L249 (2007). (DOI: 10.1143/JJAP.46.L247).
1. Feng Rao*, Zhitang Song, Min Zhong, Liangcai Wu, Gaoming Feng, Bo Liu, Songlin Feng, Bomy Chen. Multilevel data storage characteristics of phase change memory cell with doublelayer chalcogenide films (Ge2Sb2Te5 and Sb2Te3). Jpn. J. Appl. Phys. 46, L25–L27 (2007). (DOI: 10.1143/JJAP.46.L25).
授权专利
(1) 饶峰，任堃，宋志棠，任万春，用于替代DRAM及FLASH的相变存储单元及其制作方法，2012.12.5-2032.9.13，ZL201210339752.1，美国专利号US14/129955。
(2) 饶峰，任堃，宋志棠，低功耗相变存储器用限制型电极结构及制备方法，2012.8.15-2032.5.16，ZL201210152787.4。
(3) 饶峰，夏梦姣，宋志棠，陈邦明，微控制器用低功耗嵌入式相变存储器及其相变存储材料与制备方法，2012.6.20-2031.12.29，ZL201110453265.3。
(4) 饶峰，宋志棠，吴良才，任堃，周夕淋，用于相变存储器的Si-Sb-Te材料，2011.7.20-2031.1.19，ZL201110021605.5。
(5) 饶峰，宋志棠，夏梦姣，一种DRAM相变存储单元及用于替代DRAM的相变存储器，2012.2.1-2031.6.15，ZL201110160543.6。
(6) 饶峰，任堃，宋志棠，低功耗相变存储器用环形电极结构及制备方法，2012.9.12-2032.5.16，ZL201210154750.5。
(7) 饶峰，任堃，宋志棠，吴良才，用于相变存储的相变材料及调节其相变参数的方法，2012.7.4-2030.12.31，ZL201010619500.5。
项目情况
主持项目：
1、国家自然科学基金重点项目，《新型二维相变异质结材料与工作内存级信息存储器件》，2021.1-2025.12。
2、广东省基础与应用基础研究基金（区域联合基金）重点项目，《高性能相变存储器阈值转变选通材料与器件》，2020.10-2023.9。
3、深圳市基础研究（学科布局）项目，《新型高速相变缓存芯片关键技术研究》，2019.3-2022.3。
4、广东省普通高校省级重大科研项目，《高速缓存型相变存储材料与器件研究》，2018.1-2020.12。
5、深圳市基础研究（自由探索）项目，《新型高速、低功耗超晶格相变存储器》，2017.7-2019.6。
6、国家自然科学基金优秀青年基金项目，《面向内存应用的钪锑碲基高速、低功耗相变存储器研究》，2017.1-2019.12。
7、中国科学院战略性先导科技专项子课题，《高密度相变存储器技术》，2013.6-2017.6。
8、上海市启明星项目，《Al-Sb-Te材料高速、高保持力相变机理研究》，2012.9-2014.8。
9、国家自然科学基金青年基金项目，《新型相变材料的设计与优选》， 2010.1-2012.12。
10、中国科学院优秀博士学位论文、院长奖获得者科研启动专项资金，《掺杂Sb-Te基新型相变材料的研究》，2010.4-2011.12。
参与项目：
1、国家重大科学研究计划973，《基于纳米结构的相变机理及嵌入式PCRAM应用基础研究》，2007.7-2011.8。
2、国家重点基础研究发展计划973，《相变存储器规模制造技术关键基础问题研究》，2010.1-2014.8。
3、国家集成电路重大02专项，《45nm相变存储器工程化关键技术与应用》，2009.1-2012.12。
4、国家重大科学研究计划973A类，《半导体相变存储器》，2013.4-2015.8。
获奖荣誉
2020年度 腾讯创始人团队冠名特聘教授
2018年度 深圳市国家级领军人才
2016年度 国家自然科学基金委优秀青年科学基金
2014年度 中国科学院卢嘉锡青年人才奖
2012年度 上海市青年科技启明星A类
2011年度 中科院青年科技创新促进会首批会员
2011年度 全国百篇优秀博士论文提名奖
2010年度 中国科学院优秀博士论文
2009年度 中国科学院院长优秀奖
2007年度 “上海－应用材料®研究与发展基金”研究生奖学金
深圳市南山区学苑大道1066号B2栋 邮编：518071 电话：0755-86930097
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