发表论文
(1) Yongyong Che#; Mingjian Zhong#; Jianbin Liu; Keyuan Ding*; Hao Liu; Jiatao Xie; Qianqian Qin; Minglong Liu; Peixu Liu; Xiaoyan Wei; Xiaotian Zhu; Peijiang Cao*; Feng Rao*; Low-damage dry etching process of Sc-Sb-Te phase-change memory film using a chlorine-based reactive atmosphere, Applied Physics Letters, 2025,126: 182102.
(2) Hao Liu#; Huang Gong#; Kai Liu#; Keyuan Ding#; Jintao Chen; Zhaoyang Liu; Feng Rao*; Electronic excitation-induced semiconductor-metal transitions enabling ovonic threshold switching in boron telluride glasses, Chemistry of Materials, 2023, 35: 6396-6404.
(3) Xu Wang#; Keyuan Ding#; Mengchao Shi#; Junhua Li; Bin Chen; Mengjiao Xia; Jie Liu*; Yaonan Wang; Jixue Li; En Ma; Ze Zhang; He Tian*; Feng Rao*; Unusual phase transitions in two-dimensional telluride heterostructures, Materials Today, 2022, 54: 52-62.
(4) Keyuan Ding#; Bin Chen#; Feng Rao*; Boosting crystallization speed in ultrathin phase-change bridge memory device using Sb2Te3, Materials Science in Semiconductor Processing, 2021, 134: 105999.
(5) Keyuan Ding; Tianci Li; Bin Chen; Feng Rao*; Reliable 2D phase transitions for low-noise and long-life memory programming, Frontiers in Nanotechnology, 2021, 3: 649560.
(6) Keyuan Ding#; Bin Chen#; Yimin Chen#; Junqiang Wang; Xiang Shen; Feng Rao*; Recipe for ultrafast and persistent phase-change memory materials, NPG Asia Materials, 2020, 12: 63.
(7) Bin Chen#; Yimin Chen#; Keyuan Ding#; Kunlong Li; Fangying Jiao; Lei Wang; Xierong Zeng; Junqiang Wang; Xiang Shen; Wei Zhang; Feng Rao*; Evan Ma; Kinetics features conducive to cache-type nonvolatile phase-change memory, Chemistry of Materials, 2019, 31: 8794-8800.
(8) Keyuan Ding#; Jiangjing Wang#; Yuxing Zhou#; He Tian#; Lu Lu; Riccardo Mazzarello; Chunlin Jia; Wei Zhang*; Feng Rao*; Evan Ma*; Phase-change heterostructure enables ultralow noise and drift for memory operation, Science, 2019, 366(6462): 210-215.
(9) Feng Rao#*; Keyuan Ding#; Yuxing Zhou#; Yonghui Zheng; Mengjiao Xia;
Shilong Lv; Zhitang Song*; Songlin Feng; Ider Ronneberger; Riccardo Mazzarello; Wei Zhang*; Evan Ma; Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing, Science, 2017, 258(6369): 1423-1427.
(10) Keyuan Ding; Feng Rao*; Mengjiao Xia*; Zhitang Song; Liangcai Wu; Songlin Feng; The impact of W doping on the phase change behavior of Sb2Te3, Journal of Alloys and Compounds, 2016, 688(B): 22-26.
(11) Keyuan Ding; Feng Rao*; Shilong Lv; Yan Cheng; Liangcai Wu; Zhitang Song; Low-energy amorphization of Ti1Sb2Te5 phase change alloy induced by TiTe2 nano-lamellae, Scientific Reports, 2016, 6(30645).
(12) Mengjiao Xia#; Keyuan Ding#; Feng Rao*; Xianbin Li; Liangcai Wu; Zhitang Song; Aluminum-centered retrahedron-octahedron transition in advancing Al-Sb-Te phase change properties, Scientific Reports, 2015, 5(8548).
(13) Keyuan Ding*; Kun Ren; Feng Rao*; Zhitang Song; Liangcai Wu; Bo Liu; Songlin Feng; Study on the Cu-doped Ge2Sb2Te5 for low-power phase change memory, Materials Letters, 2014, 125: 143-146.
授权专利
[1] 陈献、廖玉婷、饶峰、丁科元、钟小强、张俊康、游龙彬,一种Ge3Te7非晶碲化锗纳米颗粒的制备方法,ZL202411507696.7。
[2] 丁科元、车勇勇、饶峰、陈彬、刘建彬,一种相变异质结薄膜、相变存储器及其制备方法,ZL202210900323.0。
[3] 丁科元、饶峰,相变超晶格材料及其相变存储器单元,ZL202110755173.4。
[4] 丁科元、饶峰、刘建彬、李天赐,多层相变薄膜及其相变存储器单元的制备方法,ZL202110754391.6。
[5] 宋志棠、丁科元、成岩,相变存储器单元及其制备方法,ZL201710215955.2。
[6] 丁科元、饶峰、王勇、宋志棠,用于相变存储器的相变材料及其制备方法,ZL201510697470.2。