Dr. Jin-Ping Ao received his BS degree in physics from Wuhan University in 1989, Wuhan, MS degree in semiconductor physics and semiconductor device physics from Hebei Semiconductor Research Institute (HSRI) in 1992, Shijiazhuang, and PhD degree in electronic engineering from Jilin University in 2000, Changchun, China. He joined HSRI in 1992, working on high-speed compound semiconductor devices and integrated circuits, optoelectronic devices and optoelectronic integrated circuits. He joined The University of Tokushima, Japan, in Feb 2001, and currently he is an associate professor involved in the research and development of wide bandgap semiconductor electronic devices, monolithic integrated circuits, chemical sensor and optoelectronic devices. He is also a member of the Thousand Talents Program of China and a specially-appointed professor of Xidian University. He published more than 180 papers in international journals and conferences, owing several related patents. Dr. Ao is a senior member of the IEEE and a member of The Electrochemical Society, The Japan Society of Applied Physics and The Institute of the Electronics, Information and Communication Engineers.
Titanium nitride(TiN)is been effectively adopted as a diffusion barrier as well as an adhesion-promoting layer for Cu metallization interposed between Cu and SiO2layers.To achieve thermally-stable Schottky electrode on GaN electron devices for gate-first process and high-temperature devices, TiN film was also synthesised by magnetron reactive sputtering in Ar and N2ambient as the Schottky contact on n-GaN and AlGaN/GaNHFETs. Good rectification characteristics were obtained on n-GaN. The thermal stability of TiN-gateAlGaN/GaNHFETswas also confirmed. In this presentation, the application of the TiN electrode on GaN-based electron devices will be introduced.