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饶峰
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办公电话: 26532013
EMAIL: fengrao@szu.edu.cn

教师简介



饶峰,博士,特聘教授,国家自然科学基金优秀青年科学基金获得者,深圳市国家级领军人才。在Science、Nature Communications、Nano Research等知名期刊发表SCI论文90余篇(第一作者及通讯作者论文40余篇);获中国授权发明专利43项(美国专利2项),其中第一发明人授权专利7项(美国专利1项);Scientific Reports杂志特邀编辑。曾获得中科院院长优秀奖、中科院优秀博士学位论文奖、全国百篇优秀博士论文提名奖、上海市青年科技启明星、中科院青年创新促进会首批会员、中科院卢嘉锡青年人才奖等荣誉。曾主持中国科学院战略性先导科技专项(A类)子课题、国家自然科学基金优秀青年科学基金项目、上海市青年科技启明星计划项目、国家自然科学基金青年科学基金项目、深圳市基础研究自由探索项目各一项;作为研究骨干,参加国家重大科学研究计划项目(A类)、国家科技重大专项项目等四项。


工作经历

2016.12-至今 深圳大学,材料学院,特聘教授

2009.3-2016.11 中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,助理研究员、副研究员,硕士生导师

2004.3-2006.3 中国航天时代电子公司,集成光学研究室,助理工程师

 

教育背景

2006.3-2009.3中国科学院上海微系统与信息技术研究所 信息功能材料国家重点实验室

工学博士 微电子学与固态电子学

2001.9-2004.3浙江大学 材料系 光电功能薄膜材料应用研究室

工学硕士 材料学

1997.9-2001.7中南大学 资源加工与生物工程学院 无机非金属材料系

工学学士 无机非金属材料学 (1997.9-1999.7 校强化班-化学类)


研究兴趣

1、相变、阻变存储材料、机理与器件

2、透射电镜原位电、热、力外场作用下材料行为

3、硫系非晶态半导体材料阈值转变机制

4、超晶格、准二维薄膜材料

5、发光纳米颗粒、薄膜机理与应用 


获奖荣誉

2018年度 深圳市国家级领军人才

2016年度 国家自然科学基金委优秀青年科学基金

2014 年度 中国科学院卢嘉锡青年人才奖

2012年度 上海市青年科技启明星A

2011年度 中科院青年科技创新促进会首批会员

2011年度 全国百篇优秀博士论文提名奖

2010 年度 中国科学院优秀博士论文

2009 年度 中国科学院院长优秀奖

2007年度 上海-应用材料®研究与发展基金研究生奖学金

 

项目情况

主持项目:

(1)中国科学院战略性先导科技专项子课题,《高密度相变存储器技术》(XDA09020402)2013.6-2017.6,总资助3315万元 (子课题负责人)

(2)国家自然科学基金优秀青年基金项目,《面向内存应用的钪锑碲基高速、低功耗相变存储器研究》(61622408)2017.1-2019.12,总资助130万元。

(3)中国科学院优秀博士学位论文、院长奖获得者科研启动专项资金,《掺杂Sb-Te基新型相变材料的研究》,2010.4-2011.12,总资助10万元。

(4)国家自然科学基金青年基金项目,《新型相变材料的设计与优选》(60906004) 2010.1-2012.12,总资助19万元。

(5)上海市启明星项目,《Al-Sb-Te材料高速、高保持力相变机理研究》(12QA1403900)2012.9-2014.8,总资助20万元。

(6)深圳市基础研究(自由探索)项目,《新型高速、低功耗超晶格相变存储器》,2017.7-2019.6,总资助50万元。

(7)广东省普通高校省级重大科研项目,《高速缓存型相变存储材料与器件研究》,2018.1-2020.12,总资助50万元。

参与项目:

(1)国家重大科学研究计划973,《基于纳米结构的相变机理及嵌入式PCRAM应用基础研究》(2007CB935400)2007.7-2011.8,总资助1920万元。

(2)国家重点基础研究发展计划973,《相变存储器规模制造技术关键基础问题研究》(2010CB934301)2010.1-2014.8,总资助2700万元。

(3)国家集成电路重大02专项,《45nm相变存储器工程化关键技术与应用》(2009ZX02023-3)2009.1-2012.12,总资助17949万元。

(4) 国家重大科学研究计划973A类,《半导体相变存储器》(2013CBA01900)2013.4-2015.8,总资助1900万元。

 

论文列表


2017

 

1.   Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing. Rao, Feng(#)(*); Ding, Keyuan; Zhou, Yuxing; Zheng, Yonghui; Xia, Mengjiao; Lv, Shilong; Song, Zhitang(*); Feng, Songlin; Ronneberger, Ider; Mazzarello, Riccardo; Zhang, Wei(*); Ma, Evan. Science, 2017, 358(6369): 1423-1426.

2.   Stress-enhanced lithiation in MAX compounds for battery application. Jiajie Zhu, Alexander Chroneos, Lei Wang, Feng Rao(*), Udo Schwingenschlögl. Applied Materials Today 2017, 9: 192.

3.   Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film. Zheng, Yonghui(#); Cheng, Yan(*); Huang, Rong; Qi, Ruijuan; Rao, Feng(*); Ding, Keyuan; Yin, Weijun; Song, Sannian; Liu, Weili; Song, Zhitang; Feng, Songlin. Scientific Reports, 2017, 7: 5915.

4.   The investigations of characteristics of Sb2Te as a base phase-change material. Liu, Guangyu(#); Wu, Liangcai(*); Zhu, Min; Song, Zhitang; Rao, Feng; Song, Sannian; Cheng, Yan. Solid-State Electronics, 2017, 135: 31-36.

 

2016

 

5.   Direct observation of metastable face-centered cubic Sb2Te3 crystal. Zheng, Yonghui(#); Xia, Mengjiao; Cheng, Yan(*); Rao, Feng(*); Ding, Keyuan; Liu, Weili; Jia, Yu; Song, Zhitang(*); Feng, Songlin. Nano Research, 2016, 9(11): 3453-3462.

6.   Low-Energy Amorphization of Ti1Sb2Te5 Phase Change Alloy Induced by TiTe2 Nano-Lamellae. Ding, Keyuan(#); Rao, Feng(*); Lv, Shilong; Cheng, Yan; Wu, Liangcai; Song, Zhitang. Scientific Reports, 2016, 6: 30645.

7.   Low-energy phase change memory with graphene confined layer. Zhu, Chengqiu,Ma, JunGe, XiaomingRao, Feng(*)Ding, KeyuanLv, ShilongWu, LiangcaiSong, Zhitang. APPLIED PHYSICS LETTERS201610825: 252102.

8.   The impact of W doping on the phase change behavior of Sb2Te3. Ding, Keyuan(#); Rao, Feng(*); Xia, Mengjiao(*); Song, Zhitang; Wu, Liangcai; Feng, Songlin. Journal of Alloys and Compounds, 2016, 688: 22-26.

 

2015

 

9.   Advantage of Ti-Doped Ge2Sb2Te5 Material for Phase Change Memory Applications. Cao, Liangliang(#)(*); Ji, Xinglong; Zhu, Wenqing; She, Qiumin; Chen, Yan; Hu, Zhigao; Guo, Shuang; Song, Zhitang; Rao, Feng; Qian, Bo; Wu, Liangcai. ECS Solid State Letters, 2015, 4(12): 102-104.

10.  Aluminum-Centered Tetrahedron-Octahedron Transition in Advancing Al-Sb-Te Phase Change Properties. Mengjiao Xia; Keyuan Ding; *Feng Rao; Xianbin Li; Liangcai Wu; Zhitang Song. SCIENTIFIC REPORTS, 2015, 5: 08548.

11.  Direct observation of titanium-centered octahedra in titanium-antimony-tellurium phase-change material. Rao, Feng(#); Song, Zhitang(*); Cheng, Yan; Liu, Xiaosong; Xia, Mengjiao; Li, Wei; Ding, Keyuan; Feng, Xuefei; Zhu, Min; Feng, Songlin. Nature Communications, 2015, 5: 10040.

12.  High thermal stability Sb3Te-TiN2 material for phase change memory application. Ji, Xinglong; *Wu, Liangcai; Zhou, Wangyang; Zhu, Min; Rao, Feng; Song, Zhitang; Cao, Liangliang; Feng, Songlin. Applied Physics Letters, 2015, 106(2): 023118.

13.  High thermal stable and fast switching Ni-Ge-Te alloy for phase change memory applications. Cao, Liangliang; *Wu, Liangcai; Zhu, Wenqing; Ji, Xinglong; Zheng, Yonghui; Song, Zhitang; Rao, Feng; Song, Sannian; Ma, Zhongyuan; Xu, Ling. Applied Physics Letters, 2015, 107(24): 242101.

14.  Ti-Sb-Te Alloy: A Candidate for Fast and Long-Life Phase-Change Memory. Xia, Mengjiao; *Zhu, Min; Wang, Yuchan; Song, Zhitang; Rao, Feng; Wu, Liangcai; Cheng, Yan; Song, Sannian. ACS Applied Materials & Interfaces,2015, 7(14): 7627-7634.

15.  Titanium-induced structure modification for thermal stability enhancement of a GeTeTi phase change material. Ji, Xinglong; *Wu, Liangcai; Zhu, Min; Rao, Feng; Song, Zhitang; Hu, Zhigao; Guo, Shuang; Xu, Ling; Zhou, Xilin; Feng, Songlin. RSC Advances, 2015, 5(32): 24966-24974.

16.  Understanding the crystallization behavior of as-deposited Ti-Sb-Te alloys through real-time radial distribution functions. *Zhu, Min; Xia, Mengjiao; Song, Zhitang; Cheng, Yan; Wu, Liangcai; Rao, Feng; Song, Sannian; Wang, Miao; Lu, Yegang; Feng, Songlin. Nanoscale, 2015, 7(21), 9935-9944.

17.  Vanadium doped Sb2Te3 material with modified crystallization mechanism for phase-change memory application. Ji, Xinglong; *Wu, Liangcai; Cao, Liangliang; Zhu, Min; Rao, Feng; Zheng, Yonghui; Zhou, Wangyang; Song, Zhitang; Feng, Songlin. Applied Physics Letters, 2015, 106(24): 243103.

 

2014

 

18.  High thermal stability and low density variation of carbon-doped Ge2Sb2Te5 for phase-change memory application. Zhou, Wangyang; *Wu, Liangcai; Zhou, Xilin; Rao, Feng; Song, Zhitang; Yao, Dongning; Yin, Weijun; Song, Sannian; Liu, Bo; Qian, Bo; Feng, Songlin. Applied Physics Letters, 2014, 105(24): 243113.

19.  Homogeneous phase W-Ge-Te material with improved overall phase-change properties for future nonvolatile memory. *Peng, Cheng; *Rao, Feng; Wu, Liangcai; Song, Zhitang; Gu, Yifeng; Zhou, Dong; Song, Hongjia; Yang, Pingxiong; Chu, Junhao. Acta Materialia, 2014, 74: 49-57.

20.  Mass transport in Ti0.5Sb2Te3 phase-change nanobridge. Ji, Xinglong; *Wu, Liangcai; Lv, Shilong; Rao, Feng; Zhu, Min; Song, Zhitang; Zhou, Xilin; Feng, Songlin. Acta Materialia, 2014, 73: 48-55.

21.  One order of magnitude faster phase change at reduced power in Ti-Sb-Te. Zhu, Min; Xia, Mengjiao; *Rao, Feng; Li, Xianbin; Wu, Liangcai; Ji, Xinglong; Lv, Shilong; Song, Zhitang; Feng, Songlin; Sun, Hongbo; Zhang, Shengbai. Nature Communications, 2014, 5: 4086.

22.  Phase change material W-0.04(Sb4Te)(0.96) for application in high-speed phase change memory. *Ren, Kun; *Rao, Feng; Song, Zhitang; Lu, Shilong; Peng, Cheng; Zhu, Min; Wu, Liangcai; Liu, Bo; Feng, Songlin. Journal of Alloys and Compounds, 2014, 594: 82-86.

23.  Study on the Cu-doped Ge2Sb2Te5 for low-power phase change memory. Ding, Keyuan; Ren, Kun; *Rao, Feng; Song, Zhitang; Wu, Liangcai; Liu, Bo; Feng, Songlin. Materials Letters, 2014, 125: 143-146.

24.  Study on the nitrogen-doped W-Sb-Te material for phase change memory application. Ren, Kun; Xia, Mengjiao; *Rao, Feng; Song, Zhitang; Ding, Keyuan; Ji, Xinglong; Wu, Liangcai; Liu, Bo; Feng, Songlin. Applied Physics Letters, 2014, 104(17): 173102.

25.  The micro-structure and composition evolution of Ti-Sb-Te alloy during reversible phase transition in phase change memory. Min Zhu; Liangcai Wu; *Feng Rao; Zhitang Song; Mengjia Xia; Xinglong Ji; Shilong Lv; Songling Feng. Applied Physics Letters, 2014, 104(6): 063105.

26.  Understanding Phase-Change Behaviors of Carbon-Doped Ge2Sb2Te5 for Phase-Change Memory Application. Zhou, Xilin; Xia, Mengjiao; *Rao, Feng; Wu, Liangcai; Li, Xianbin; Song, Zhitang; Feng, Songlin; Sun, Hongbo. ACS Applied Materials & Interfaces, 2014, 6(16): 14207-14214.

27.  Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications. Zhu, Min; *Wu, Liangcai; *Rao, Feng; Song, Zhitang; Ren, Kun; Ji, Xinglong; Song, Sannian; Yao, Dongning; Feng, Songlin. Applied Physics Letters, 2014, 104(5): 053119.

 

2013

 

28.  An Improvement of the Thermal Stability of SnTe through Nitrogen Doping. Xia Meng-Jiao; *Rao Feng; Song Zhi-Tang; Ren Kun; Wu Liang-Cai; Liu Bo; Feng Song-Lin. Chinese Physics Letters, 2013, 30(3): 037401.

29.  A simple method used to evaluate phase-change materials based on focused-ion beam technique. Peng, Cheng; *Wu, Liangcai; *Rao, Feng; Song, Zhitang; Lv, Shilong; Zhou, Xilin; Du, Xiaofeng; Cheng, Yan; Yang, Pingxiong; Chu, Junhao. Applied Physics Letters, 2013, 102(20): 203510.

30.  Characterization of Cu doping on GeTe for phase change memory application. *Zhang, Zhonghua; Peng, Cheng; Song, Sannian; Song, Zhitang; Cheng, Yan; Ren, Kun; Li, Xiaoyun; Rao, Feng; Liu, Bo; Feng, Songlin. Journal of Applied Physics, 2013, 114(24): 244311.

31.  Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge2+xSb2Te5 (x=0,1) thin films for phase-change memory. *Cheng, Limin; Wu, Liangcai; Song, Zhitang; Rao, Feng; Peng, Cheng; Yao, Dongning; Liu, Bo; Xu, Ling. Journal of Applied Physics, 2013, 113(4): 044514.

32.  High tolerance of proton irradiation of Ge2Sb2Te5 phase change material. *Zhou, Dong; Wu, Liangcai; Guo, Qi; Peng, Cheng; He, Chengfa; Song, Zhitang; Rao, Feng; Li, Yudong; Xi, Shanbin. Journal of Alloys and Compounds, 2013, 575: 229-232.

33.  Investigation of Al doping on Ge55Te45 for phase change memory application. *Ren, Kun; *Rao, Feng; Song, Zhitang; Wu, Liangcai; Xia, Mengjiao; Liu, Bo; Feng, Songlin. Journal of Applied Physics, 2013, 113(23): 234312.

34.  Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application. *Zhang, Zhonghua; Song, Sannian; Song, Zhitang; Cheng, Yan; Rao, Feng; Wu, Liangcai; Liu, Bo; Chen, Bomy; Lu, Yegang. Applied Physics Letters, 2013, 103(14): 142112.

35.  Investigation on nitrogen-doped Ge2Sb2Te5 material for phase-change memory application. Yao, Dongning; Zhou, Xilin; *Wu, Liangcai; Song, Zhitang; Cheng, Limin; Rao, Feng; Liu, Bo; Feng, Songlin. Solid-State Electronics, 2013, 79: 138-141.

36.  Nitrogen-doped Ge3Te2 materials with self-restricted active region for low power phase-change memory. *Peng, Cheng; Yang, Pingxiong; Wu, Liangcai; Song, Zhitang; Rao, Feng; Song, Sannian; Zhou, Dong; Chu, Junhao. Journal of Applied Physics, 2013, 113(3): 034310.

37.  Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high-performance phase-change memory. Zhou, Xilin; *Wu, Liangcai; Song, Zhitang; Cheng, Yan; *Rao, Feng; Ren, Kun; Song, Sannian; Liu, Bo; Feng, Songlin. Acta Materialia, 2013, 61(19): 7324-7333.

38.  Phase transition characteristics of Al-Sb phase change materials for phase change memory application. *Zhou, Xilin; Wu, Liangcai; Song, Zhitang; *Rao, Feng; Ren, Kun; Peng, Cheng; Song, Sannian; Liu, Bo; Xu, Ling; Feng, Songlin. Applied Physics Letters, 2013, 103(7): 072114.

39.  Study on Etching Process and Mechanism of New Phase Change Material Ti0.5Sb2Te3. *Zhang Xu; Liu Bo; Song San-Nian; Yao Dong-Ning; Zhu Min; Rao Feng; Wu Liang-Cai; Song Zhi-Tang; Feng Song-Lin. Journal of Inorganic Materials, 2013, 28(12): 1364-1368.

40.  Study on the impact of the initialization process on the phase change memory. *Ren, Kun; *Rao, Feng; Song, Zhitang; Lv, Shilong; Zhu, Min; Wu, Liangcai; Liu, Bo; Feng, Songlin. APPLIED PHYSICS LETTERS, 2013, 102(21): 213503.

41.  Study on the thermal stability improvement of GeTe by Al doping. *Ren, Kun; *Rao, Feng; Song, Zhitang; Peng, Cheng; Li, Juntao; Wu, Liangcai; Liu, Bo; Feng, Songlin. Applied Physics Letters, 2013, 103(9): 093111.

42.  The effect of titanium doping on the structure and phase change characteristics of Sb4Te. Zhu, Min; *Wu, Liangcai; *Rao, Feng; Song, Zhitang; Ji, Xinglong; Yao, Dongning; Cheng, Yan; Lv, Shilong; Song, Sannian; Liu, Bo; Xu, Ling. Journal of Applied Physics, 2013, 114(12): 124302.

 

2012

 

43.  Advantages of GeTeN material for phase change memory applications. Peng, Cheng; *Wu, Liangcai; Song, Zhitang; Zhou, Xilin; Zhu, Min; Rao, Feng; Liu, Bo; Feng, Songlin. Journal of Non-Crystalline Solids, 2012, 358(17): 2416-2419.

44.  Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application. Zhou, Xilin; *Wu, Liangcai; Song, Zhitang; *Rao, Feng; Zhu, Min; Peng, Cheng; Yao, Dongning; Song, Sannian; Liu, Bo; Feng, Songlin. Applied Physics Letters, 2012, 101(14): 142104.

45.  Germanium Nitride as a Buffer Layer for Phase Change Memory. Zhang Xu; *Liu Bo; Peng Cheng; Rao Feng; Zhou Xi-Lin; Song San-Nian; Wang Liang-Yong; Cheng Yan; Wu Liang-Cai; Yao Dong-Ning; Song Zhi-Tang; Feng Song-Lin. Chinese Physics Letters, 2012, 29(10): 107201.

46.  High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material. *Xu, Jian' an; Rao, Feng; Song, Zhitang; Xia, MengJiao; Peng, Cheng; Gu, Yifeng; Zhu, Min; Wu, Liangcai; Liu, Bo; Feng, Songlin. Electrochemical and Solid-State Letters, 2012, 15(3): H59-H61.

47.  Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memory application. *Cheng, Limin; Wu, Liangcai; Song, Zhitang; Rao, Feng; Peng, Cheng; Yao, Dongning; Liu, Bo. Materials Letters, 2012, 71: 98-100.

48.  Improved Thermal Stability and Electrical Properties for Al-Sb-Te Based Phase-Change Memory. Peng, Cheng; *Wu, Liangcai; *Rao, Feng; Song, Zhitang; Yang, Pingxiong; Cheng, Limin; Li, Juntao; Zhou, Xilin; Zhu, Min; Liu, Bo; Chu, Junhao. ECS Solid State Letters, 2012, 1(2): P38-P41.

49.  Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials. *Rao, Feng; Song, Zhitang; Cheng, Yan; Xia, Mengjiao; Ren, Kun; Wu, Liangcai; Liu, Bo; Feng, Songlin. Acta Materialia, 2012, 60(1): 323-328.

50.  Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications. *Lu, Yegang; Song, Sannian; Song, Zhitang; Rao, Feng; Wu, Liangcai; Zhu, Min; Liu, Bo; Yao, Dongning. Applied Physics Letters, 2012, 100(19): 193114.

51.  Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application. *Wu, Liangcai; Zhu, Min; Song, Zhitang; Lv, Shilong; Zhou, Xilin; Peng, Cheng; Rao, Feng; Song, Sannian; Liu, Bo; Feng, Songlin. Journal of Non-Crystalline Solids, 2012, 358(17): 2409-2411.

52.  Local atomic structure in molten Si3Sb2Te3 phase change material. *Li, Xuelai; Sun, Zhimei; Rao, Feng; Song, Zhitang; Liu, Weili; Sa, Baisheng. Solid State Communications, 2012, 152(2): 100-103.

53.  N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory. *Peng, Cheng; Yang, Pingxiong; Wu, Liangcai; Song, Zhitang; Rao, Feng; Xu, Jian'an; Zhou, Xilin; Zhu, Min; Liu, Bo; Chu, Junhao. Electrochemical and Solid-State Letters, 2012, 15(4): H101-H104.

54.  Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application. *Ren, Kun; *Rao, Feng; Song, Zhitang; Lv, Shilong; Cheng, Yan; Wu, Liangcai; Peng, Cheng; Zhou, Xilin; Xia, Mengjiao; Liu, Bo; Feng, Songlin. Applied Physics Letters, 2012, 100(5): 052105.

55.  Superlattice-like electrode for low-power phase-change random access memory. *Lu, Yegang; Song, Sannian; Song, Zhitang; Wu, Liangcai; He, Aodong; Gong, Yuefeng; Rao, Feng; Liu, Bo. Applied Physics Letters, 2012, 101(11): 113104.

56.  Superlattice-like GaSb/Sb2Te3 films for low-power phase change memory. *Lu, Yegang; Song, Sannian; Song, Zhitang; Ren, Wanchun; Xiong, Yulin; Rao, Feng; Wu, Liangcai; Cheng, Yan; Liu, Bo. Scripta Materialia, 2012, 66(9): 702-705.

57.  Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed. Zhu, Min; *Wu, Liangcai; Song, Zhitang; Rao, Feng; Cai, Daolin; Peng, Cheng; Zhou, Xilin; Ren, Kun; Song, Sannian; Liu, Bo; Feng, Songlin. Applied Physics Letters, 2012, 100(12): 122101.

58.  W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention. Peng, Cheng; *Wu, Liangcai; *Rao, Feng; Song, Zhitang; Yang, Pingxiong; Song, Hongjia; Ren, Kun; Zhou, Xilin; Zhu, Min; Liu, Bo; Chu, Junhao. Applied Physics Letters, 2012, 101(12): 122108.

 

2011

 

59.  Ab initio study of Sb(2)Se(x)Te(3-x)(x=0, 1, 2) phase change materials. Li Xuelai; *Sun Zhimei; Song Zhitang; Rao Feng; Wu Liangcai; Liu Weili. Solid State Sciences, 2011, 13(1): 131-134.

60.  Al1.3Sb3Te material for phase change memory application. Peng, Cheng; Song, Zhitang; *Rao, Feng; Wu, Liangcai; Zhu, Min; Song, Hongjia; Liu, Bo; Zhou, Xilin; Yao, Dongning; Yang, Pingxiong; Chu, Junhao. Applied Physics Letters, 2011, 99(4): 043105.

61.  Experimental and theoretical study of silicon-doped Sb(2)Te(3) thin films: Structure and phase stability. *Li, Xuelai; Rao, Feng; Song, Zhitang; Ren, Kun; Liu, Weili; Sun, Zhimei. Applied Surface Science, 2011, 257(10): 4566-4568.

62.  Ga-Sb-Se material for low-power phase change memory. *Lu, Yegang; Song, Sannian; Gong, Yuefeng; Song, Zhitang; Rao, Feng; Wu, Liangcai; Liu, Bo; Yao, Dongning. Applied Physics Letters, 2011, 99(24): 243111.

63.  High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material. *Xu, Jian'an; Rao, Feng; Song, Zhitang; Xia, MengJiao; Peng, Cheng; Gu, Yifeng; Zhu, Min; Wu, Liangcai; Liu, Bo; Feng, Songlin. Electrochemical and Solid-State Letters, 2011, 15(3): H59-H61.

64.  Influence of silicon on the thermally-induced crystallization process of Si-Sb4Te phase change materials. *Cheng, Yan; Song, Zhitang; Gu, Yifeng; Song, Sannian; Rao, Feng; Wu, Liangcai; Liu, Bo; Feng, Songlin. Applied Physics Letters, 2011, 99(26): 261914.

65.  Instability of nitrogen doped Sb2Te3 for phase change memory application. *Li, Xuelai; Rao, Feng; Song, Zhitang; Zhu, Min; Liu, Weili; Sun, Zhimei. Journal of Applied Physics, 2011, 110(9): 094318.

66.  Investigation of phase transition behaviors of the nitrogen-doped Sb-rich Si-Sb-Te films for phase-change memory. Zhou, Xilin; *Wu, Liangcai; Song, Zhitang; Rao, Feng; Ren, Kun; Peng, Cheng; Liu, Bo; Yao, Dongning; Feng, Songlin; Chen, Bomy. Thin Solid Films, 2011, 520(3): 1155-1159.

67.  Investigation of Sb-rich Si2Sb2+x Te-6 material for phase change random access memory application. *Zhou, Xilin; Wu, Liangcai; Song, Zhitang; Rao, Feng; Liu, Bo; Yao, Dongning; Yin, Weijun; Feng, Songlin; Chen, Bomy. Applied Physics A-Materials Science & Processing, 2011, 103(4): 1077-1081.

68.  Nano composite Si2Sb2Te film for phase change memory. *Rao, Feng; Ren, Kun; Gu, Yifeng; Song, Zhitang; Wu, Liangcai; Zhou, Xilin; Liu, Bo; Feng, Songlin; Chen, Bomy. Thin Solid Films, 2011, 519(16): 5684-5688.

69.  N-doped Sb2Te phase change materials for higher data retention. *Zhu, Min; Wu, Liangcai; Rao, Feng; Song, Zhitang; Li, Xuelai; Peng, Cheng; Zhou, Xilin; Ren, Kun; Yao, Dongning; Feng, Songlin. Journal of Alloys and Compounds, 2011, 509(41): 10105-10109.

70.  Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application. *Peng, Cheng; Wu, Liangcai; Rao, Feng; Song, Zhitang; Zhou, Xilin; Zhu, Min; Liu, Bo; Yao, Dongning; Feng, Songlin; Yang, Pingxiong; Chu, Junhao. Scripta Materialia, 2011, 65(4): 327-330.

71.  Performance improvement of Sb2Te3 phase change material by Al doping. *Peng, Cheng; Wu, Liangcai; Song, Zhitang; Rao, Feng; Zhu, Min; Li, Xuelai; Liu, Bo; Cheng, Limin; Feng, Songlin; Yang, Pingxiong; Chu, Junhao. Applied Surface Science, 2011, 257(24): 10667-10670.

72.  Phase Change Characteristics of SiO2 Doped Sb2Te3 Materials for Phase Change Memory Application. *Zhu, Min; Wu, Liangcai; Rao, Feng; Song, Zhitang; Peng, Cheng; Li, Xuelai; Yao, Dongning; Xi, Wei; Feng, Songlin. Electrochemical and Solid-State Letters, 2011, 14(10): H404-H407.

73.  Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state. *Zhou, Xilin; Wu, Liangcai; Song, Zhitang; Rao, Feng; Cheng, Yan; Peng, Cheng; Yao, Dongning; Song, Sannian; Liu, Bo; Feng, Songlin; Chen, Bomy. Applied Physics Letters, 2011, 99(3): 032105.

74.  Sb-rich Si-Sb-Te phase-change material for phase-change random access memory applications. *Wu, Liangcai; Zhou, Xilin; Song, Zhitang; Zhu, Min; Cheng, Yan; Rao, Feng; Song, Sannian; Liu, Bo; Feng, Songlin. IEEE Transactions on Electron Devices, 2011, 58(12): 4423-4426.

75.  Si-Sb-Te materials for phase change memory applications. *Rao, Feng; Song, Zhitang; Ren, Kun; Zhou, Xilin; Cheng, Yan; Wu, Liangcai; Liu, Bo. Nanotechnology, 2011, 22(14): 145702.

76.  Study on Interface Adhesion between Phase Change Material Film and SiO2 Layer by Nanoscratch Test. *Zhou, Xilin; Wu, Liangcai; Song, Zhitang; Rao, Feng; Ren, Kun; Peng, Cheng; Guo, Xiaohui; Liu, Bo; Feng, Songlin. Japanese Journal of Applied Physics, 2011, 50(9): 091402.

77.  Study on the crystallization behaviors of Si2Sb2Tex materials. *Ren, Kun; Rao, Feng; Song, Zhitang; Cheng, Yan; Wu, Liangcai; Zhou, Xilin; Gong, Yuefeng; Xia, Mengjiao; Liu, Bo; Feng, Songlin. Scripta Materialia, 2011, 64(7): 685-688.

 

2010

 

78.  Au-197 irradiation study of phase-change memory cell with GeSbTe alloy. *Wu, Liangcai; Zhou, Xilin; Song, Zhitang; Lian, Jie; Rao, Feng; Liu, Bo; Song, Sannian; Liu, Weili; Liu, Xuyan; Feng, Songlin. Physica Status Solidi A-Applications and Materials Science, 2010, 207(10): 2395-2398.

79.  Phase Change Memory Cell Using Si2Sb2Te3 Material. *Ren, Kun; Rao, Feng; Song, Zhitang; Wu, Liangcai; Zhou, Xilin; Liu, Bo; Feng, Songlin; Xi, Wei; Chen, Bomy. Japanese Journal of Applied Physics, 2010, 49(8): 080212.

80.  Si3.5Sb2Te3 Phase Change Material for Low-Power Phase Change Memory Application. *Ren Kun; Rao Feng; Song Zhi-Tang; Wu Liang-Cai; Zhou Xi-Lin; Xia Meng-Jiao; Liu Bo; Feng Song-Lin; Xi Wei; Yao Dong-Ning; Chen Bomy. Chinese Physics Letters, 2010, 27(10): 108101.

 

2009

 

81.  Multistate storage through successive phase change and resistive change. *Wu, Liangcai; Song, Zhitang; Rao, Feng; Gong, Yuefeng; Feng, Songlin. Applied Physics Letters, 2009, 94(24): 243115.

82.  Phase change memory cell based on Sb2Te3/TiN/Ge2Sb2Te5 sandwich-structure. *Rao, Feng; Song, Zhitang; Wu, Liangcai; Gong, Yuefeng; Feng, Songlin; Chen, Bomy. Solid-State Electronics, 2009, 53(3): 276-278.

83.  Si2Sb2Te6 phase change material for low-power phase change memory application. *Zhou, Xilin; Wu, Liangcai; Song, Zhitang; Rao, Feng; Liu, Bo; Yao, Dongning; Yin, Weijun; Li, Juntao; Feng, Songlin; Chen, Bomy. Applied Physics Express, 2009, 2(9): 091401.

84.  Sn12Sb88 material for phase change memory. *Rao, Feng; Song, Zhitang; Ren, Kun; Li, Xuelai; Wu, Liangcai; Xi, Wei; Liu, Bo. Applied Physics Letters, 2009, 95(3): 032105.

85.  The effect of annealing and chemical mechanical polishing on Ge2Sb2Te5 phase change memory. *Zhong, Min; Song, Zhitang; Liu, Bo; Chen, Yifeng; Gong, Yuefeng; Rao, Feng; Feng, Songlin; Zhang, Fuxiong; Xiang, Yanghui. Scripta Materialia, 2009, 60(11): 957-959.

 

2008

 

86.  Germanium nitride interfacial layer for chalcogenide random access memory applications. *Shen, Jie; Liu, Bo; Song, Zhitang; Xu, Cheng; Rao, Feng; Liang, Shuang; Feng, Songlin; Chen, Bomy. Applied Physics Express, 2008, 1(1): 011201.

87.  Performance improvement of phase-change memory cell with cup-shaped bottom electrode contact. *Wu, L. C.; Song, Z. T.; Rao, F.; Gong, Y. F.; Liu, B.; Wang, L. Y.; Liu, W. L.; Feng, S. L. Applied Physics Letters, 2008, 93(10): 103107.

88.  Phase change memory cell using tungsten trioxide bottom heating layer. *Rao, Feng; Song, Zhitang; Gong, Yuefeng; Wu, Liangcai; Liu, Bo; Feng, Songlin; Chen, Bomy. Applied Physics Letters, 2008, 92(22): 223507.

89.  Polycrystalline Si-rich SiSbx bottom heating layer for phase change memory. *Rao, Feng; Song, Zhitang; Zhang, Ting; Gong, Yuefeng; Wu, Liangcai; Feng, Songlin; Chen, Bomy. Electrochemical and Solid-State Letters, 2008, 11(6): H147-H149.

90.  Programming voltage reduction in phase change memory cells with tungsten trioxide bottom heating layer/electrode. *Rao, Feng; Song, Zhitang; Gong, Yuefeng; Wu, Liangcai; Feng, Songlin; Chen, Bomy. Nanotechnology, 2008, 19(44): 445706.

 

2007

 

91.  High speed chalcogenide random access memory based on Si2Sb2Te5. *Zhang, Ting; Song, Zhitang; Rao, Feng; Feng, Gaoming; Liu, Bo; Feng, Songlin; Chen, Bomy. Japanese Journal of Applied Physics, 2007, 46(8-11): L247-L249.

92.  Set and reset properties of phase change memory cells with double-layer chalcogenide films (Ge2Sb2Te5 and Sb2Te3). *Feng, Rao; Song, Zhitang; Wu, Liangcai; Feng, Songlin; Chen, Bomy. Journal of the Electrochemical Society, 2007, 154(12): H999-H1003.

93.  Investigation on the stabilization of the median resistance state for phase change memory cell with doublelayer chalcogenide films. *Rao, Feng; Song, Zhitang; Wu, Liangcai; Liu, Bo; Feng, Songlin; Chen, Bomy. Applied Physics Letters, 2007, 91(12): 123511.

94.  Multilevel data storage characteristics of phase change memory cell with douhlelayer chalcogenide films (Ge2Sb2Te5 and Sb2Te3). *Rao, Feng; Song, Zhitang; Zhong, Min; Wu, Liangcai; Feng, Gaoming; Liu, Bo; Feng, Songlin; Chen, Bomy. Japanese Journal of Applied Physics, 2007, 46(1-3): L25-L27.

95.  Multiple phase-transition in Ge2Sb2Te5 based phase change memory cell by current-voltage measurement. *Wu, Liangcai; Song, Zhitang; Liu, Bo; Zhang, Ting; Rao, Feng; Shen, Jie; Wang, Feng; Feng, Songlin. Journal of Non-Crystalline Solids, 2007, 353(44-46): 4043-4047.

96.  Phase change memory cell with an upper amorphous nitride silicon germanium heating layer. *Rao, Feng; Song, Zhitang; Wu, Liangcai; Zhong, Min; Feng, Songlin. Applied Physics Letters, 2007, 91(7): 073505.

97.  Remarkable resistance change in plasma oxidized TiOx/TiNx film for memory application. *Wu Liang-Cai; Song Zhi-Tang; Liu Bo; Rao Feng; Xu Cheng; Zhang Ting; Yin Wei-Jun; Feng Song-Lin. Chinese Physics Letters, 2007, 24(4): 1103-1105.



第一发明人授权专利

(1) 饶峰,任堃,宋志棠,任万春,用于替代DRAMFLASH的相变存储单元及其制作方法,2012.12.5-2032.9.13ZL201210339752.1,美国专利号US14/129955

(2) 饶峰,任堃,宋志棠,低功耗相变存储器用限制型电极结构及制备方法,2012.8.15-2032.5.16ZL201210152787.4

(3) 饶峰,夏梦姣,宋志棠,陈邦明,微控制器用低功耗嵌入式相变存储器及其相变存储材料与制备方法,2012.6.20-2031.12.29ZL201110453265.3

(4) 饶峰,宋志棠,吴良才,任堃,周夕淋,用于相变存储器的Si-Sb-Te材料,2011.7.20-2031.1.19ZL201110021605.5

(5) 饶峰,宋志棠,夏梦姣,一种DRAM相变存储单元及用于替代DRAM的相变存储器,2012.2.1-2031.6.15ZL201110160543.6

(6) 饶峰,任堃,宋志棠,低功耗相变存储器用环形电极结构及制备方法,2012.9.12-2032.5.16ZL201210154750.5

(7) 饶峰,任堃,宋志棠,吴良才,用于相变存储的相变材料及调节其相变参数的方法,2012.7.4-2030.12.31ZL201010619500.5


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