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饶峰
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办公电话: 26532013
EMAIL: fengrao@szu.edu.cn

教师简介



饶峰,博士,特聘教授。在Nature Communications、Nano Research等知名期刊发表SCI论文90余篇(第一作者及通讯作者论文40余篇);获中国授权发明专利43项(美国专利2项),其中第一发明人授权专利7项(美国专利1项);Scientific Reports杂志特邀编辑。曾获得中科院院长优秀奖、中科院优秀博士学位论文奖、全国百篇优秀博士论文提名奖、上海市青年科技启明星、中科院青年创新促进会首批会员、中科院卢嘉锡青年人才奖等荣誉。曾主持中国科学院战略性先导科技专项(A类)子课题、国家自然科学基金优秀青年科学基金项目、上海市青年科技启明星计划项目和国家自然科学基金优秀青年科学基金项目各一项;作为研究骨干,参加国家重大科学研究计划项目(A类)、国家科技重大专项项目等四项。


工作经历

2016.12-至今 深圳大学,材料学院,特聘教授

2009.3-2016.11 中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,助理研究员、副研究员,硕士生导师

2004.3-2006.3 中国航天时代电子公司,集成光学研究室,助理工程师

 

教育背景

2006.3-2009.3中国科学院上海微系统与信息技术研究所 信息功能材料国家重点实验室

工学博士 微电子学与固态电子学

2001.9-2004.3浙江大学 材料系 光电功能薄膜材料应用研究室

工学硕士 材料学

1997.9-2001.7中南大学 资源加工与生物工程学院 无机非金属材料系

工学学士 无机非金属材料学 (1997.9-1999.7 校强化班-化学类)


研究兴趣

1、相变、阻变存储材料、机理与器件

2、透射电镜原位电、热、力外场作用下材料行为

3、硫系非晶态半导体材料

4、超晶格、准二维薄膜材料 


获奖荣誉

2016年度 国家自然科学基金委优秀青年科学基金

2015年度 中国科学院上海微系统与信息技术研究所优秀员工

2014 年度 中国科学院卢嘉锡青年人才奖

2012年度 上海市青年科技启明星A

2011年度 中科院青年科技创新促进会首批会员

2011年度 全国百篇优秀博士论文提名奖

2011年度 中国科学院上海微系统与信息技术研究所优秀员工

2010 年度 中国科学院优秀博士论文

2009 年度 中国科学院院长优秀奖

2007年度 上海-应用材料®研究与发展基金研究生奖学金

 

项目情况

主持项目:

①   中国科学院战略性先导科技专项子课题,《高密度相变存储器技术》(XDA09020402)2013.6-2017.6,总资助3315万元 (子课题负责人)

②   国家自然科学基金优秀青年基金项目,《面向内存应用的钪锑碲基高速、低功耗相变存储器研究》(61622408)2017.1-2019.12,总资助130万元。

③   中国科学院优秀博士学位论文、院长奖获得者科研启动专项资金,《掺杂Sb-Te基新型相变材料的研究》,2010.4-2011.12,总资助10万元。

④   国家自然科学基金青年基金项目,《新型相变材料的设计与优选》(60906004) 2010.1-2012.12,总资助19万元。

⑤   上海市启明星项目,《Al-Sb-Te材料高速、高保持力相变机理研究》(12QA1403900)2012.9-2014.8,总资助20万元。

⑥   深圳市基础研究(自由探索)项目,《新型高速、低功耗超晶格相变存储器》,2018.1-2019.12,总资助50万元。

参与项目:

①    国家重大科学研究计划973,《基于纳米结构的相变机理及嵌入式PCRAM应用基础研究》(2007CB935400)2007.7-2011.8,总资助1920万元。

②    国家重点基础研究发展计划973,《相变存储器规模制造技术关键基础问题研究》(2010CB934301)2010.1-2014.8,总资助2700万元。

③    国家集成电路重大02专项,《45nm相变存储器工程化关键技术与应用》(2009ZX02023-3)2009.1-2012.12,总资助17949万元。

④    国家重大科学研究计划973A类,《半导体相变存储器》(2013CBA01900)2013.4-2015.8,总资助1900万元。

 

第一与通讯作者论文列表

1.     Yonghui Zheng, Yan Cheng,Rong Huang, Ruijuan Qi, Feng Rao, Keyuan Ding, Weijun Yin, Sannian Song, Weili Liu, Zhitang Song, Songlin Feng. Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film, Scientific Reports in press, 2017.

2.     Feng Rao, Zhitang Song, Yan Cheng, Xiaosong Liu, Mengjiao Xia, Wei Li, Keyuan Ding, Xuefei Feng, Min Zhu, and Songlin Feng. Direct observation of titanium-centered octahedral in titanium–antimony–tellurium phase-change material, Nature Communications 5: 10040, 2015.

3.     Min Zhu, Mengjiao Xia, Feng Rao, Liangcai Wu, Xianbin Li, Zhitang Song, Xinglong Ji, Shilong Lv, Hongbo Su,Shengbai Zhang, and Songling Feng. One order of magnitude faster phase change at reduced power in Ti-Sb-Te, Nature Communications 5: 4086, 2014.

4.     Yonghui Zheng, Mengjiao Xia, Yan Cheng, Feng Rao, Keyuan Ding, Weili Liu, Yu Jia, Zhitang Song, Songlin Feng. Direct observation of metastable face-centered cubic Sb2Te3 crystal, Nano Research 9: 3453, 2016.

5.     Keyuan Ding, Feng Rao, Shilong Lv, Yan Cheng, Liangcai Wu, Zhitang Song. Low-Energy Amorphization of Ti1Sb2Te5 Phase Change Alloy Induced by TiTe2 Nano-Lamellae, Scientific Reports 6: 30645, 2016.

6.     Xilin Zhou, Mengjiao Xia, Feng Rao, Liangcai Wu, Xianbin Li, Zhitang Song, Songlin Feng, and Hongbo Sun. Understanding Phase-Change Behaviors of Carbon-Doped Ge2Sb2Te5 for Phase-Change Memory Application, ACS Applied Materials & Interface 6: 14207, 2014.

7.     Mengjiao Xia, Keyuan Ding, Feng Rao, Xianbin Li, Liangcai Wu, Zhitang Song. Aluminum-Centered Tetrahedron-Octahedron Transition in Advancing Al-Sb-Te Phase Change Properties, Scientific Reports 5: 8548, 2015.

8.     Mengjiao Xia, Min Zhu, Yuchan Wang, Zhitang Song, Feng Rao, Liangcai Wu, Yan Cheng, and Sannian Song. Ti−Sb−Te Alloy: A Candidate for Fast and Long-Life Phase-Change Memory, ACS Applied Materials & Interface 7: 7627, 2015.

9.     Min Zhu, Mengjiao Xia, Zhitang Song, Yan Cheng, Liangcai Wu, Feng Rao, Sannian Song, Miao Wang, Yegang Lu, and Songlin Feng. Understanding the crystallization behavior of as-deposited Ti–Sb–Te alloys through real-time radial distribution functions, Nano Scale 7: 9935, 2015.

10.   Chengqiu Zhu, Jun Ma, Xiaoming Ge, Feng Rao, Keyuan Ding, Shilong Lv, Liangcai Wu, and Zhitang Song. Low-energy phase change memory with graphene confined layer, Applied Physics Letters 108: 252102, 2016.

11.   Keyuan Ding, Kun Ren, Feng Rao, Zhitang Song,Liangcai Wu, Bo Liu, and Songlin Feng. Study on the Cu-doped Ge2Sb2Te5 for low-power phase change memory, Materials Letters 125: 143, 2014.

12.   Kun Ren, Mengjiao Xia, Feng Rao, Zhitang Song, Keyuan Ding, Xinglong Ji, Liangcai Wu, Bo Liu, and Songlin Feng. Study on the nitrogen-doped W-Sb-Te material for phase change memory application, Applied Physics Letters 104: 173102, 2014.

13.   Cheng Peng, Feng Rao, Liangcai Wu, Zhitang Song, Yifeng Gu, Dong Zhou, Hongjia Song, Pingxiong Yang, Junhao Chu. Homogeneous phase W–Ge–Te material with improved overall phase-change properties for future nonvolatile memory, Acta Materialia 74: 49, 2014.

14.   Min Zhu, Liangcai Wu, Feng Rao, Zhitang Song, Mengjia Xia, Xinglong Ji, Shilong Lv, and Songling Feng. The micro-structure and composition evolution of Ti-Sb-Te alloy during reversible phase transition in phase change memory, Applied Physics Letters 104: 063105, 2014.

15.   Min Zhu, Liangcai Wu, Feng Rao, Zhitang Song, Kun Ren, Xinglong Jia, Sannian Song, Dongning Yao, and Songlin Feng. Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications, Applied Physics Letters, 104: 053199, 2014.

16.   Kun Ren, Feng Rao, Zhitang Song, Shilong Lu, Cheng Peng, Min Zhu, Liangcai Wu, Bo Liu, and Songlin Feng. Phase change material W0.04(Sb4Te)0.96 for application in high-speed phase change memory, Journal of Alloys and Compounds, 594: 82, 2014.

17.   Kun Ren, Feng Rao, Zhitang Song, Shilong Lv, Min Zhu, Liangcai Wu, Bo Liu, and Songlin Feng. Study on the impact of the initialization process on the phase change memory, Applied Physics Letters 102: 213503, 2013.

18.   Cheng Peng, Liangcai Wu, Feng Rao, Zhitang Song, Shilong Lv, Xilin Zhou, Xiaofeng Du, Yan Cheng, Pingxiong Yang, and Junhao Chu. A simple method used to evaluate phase-change materials based on focused-ion beam technique, Applied Physics Letters 102: 203510, 2013.

19.   Mengjiao Xia, Feng Rao, Zhitang Song, Kun Ren, Liangcai Wu, Bo Liu, and Songlin Feng. An Improvement of the Thermal Stability of SnTe through Nitrogen Doping, Chinese Physics Letters, 30 (3): 037401, 2013.

20.   Kun Ren, Feng Rao, Zhitang Song, Liangcai Wu, Mengjiao Xia, Bo Liu, and Songlin Feng. Investigation of Al doping on Ge55Te45 for phase change memory application, Journal of Applied Physics 113: 234312, 2013.

21.   Xilin Zhou, Liangcai Wu, Zhitang Song, Feng Rao, Kun Ren, Cheng Peng, Sannian Song, Bo Liu, Ling Xu, and Songlin Feng. Phase transition characteristics of Al-Sb phase change materials for phase change memory application, Applied Physics Letters 103: 072114, 2013.

22.   Kun Ren, Feng Rao, Zhitang Song, Cheng Peng, Juntao Li, Liangcai Wu, Bo Liu, and Songlin Feng. Study on the Thermal Stability Improvement of GeTe by Al Doping, Applied Physics Letters 103: 093111, 2013.

23.   Xilin Zhou, Liangcai Wu, Zhitang Song, Yan Cheng, Feng Rao, Kun Ren, Sannian Song, Bo Liu, and Songlin Feng. Nitrogen-doped Sb-rich Si-Sb-Te Phase-change Material for High Performance Phase-change Memory, Acta Materialia 61: 7324, 2013.

24.   Min Zhu, Liangcai Wu, Feng Rao, Zhitang Song, Xinglong Jia, Dongning Yao, Yan Cheng, Shilong Lv, Sannian Song, Bo Liu, and Ling Xu. The Effect of Titanium Doping on the Structure and Phase Change Characteristics of Sb4Te, Journal of Applied Physics, 114: 124302, 2013.

25.   Xilin Zhou, Liangcai Wu, Zhitang Song, Feng Rao, Min Zhu, Cheng Peng, Dongning Yao, Sannian Song, Bo Liu, and Songlin Feng. Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application, Applied Physics Letters 101: 102104, 2012.

26.   Cheng Peng, Liangcai Wu, Feng Rao, Zhitang Song, Pingxiong Yang, Hongjia Song, Kun Ren, Xilin Zhou, Min Zhu, Bo Liu, and Junhao Chu. W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention, Applied Physics Letters 101: 122108, 2012.

27.   Cheng Peng, Liangcai Wu, Feng Rao, Zhitang Song, Pingxiong Yang, Limin Cheng, Juntao Li, Xilin Zhou, Min Zhu, Bo Liu, and Junhao Chu. Improved Thermal Stability and Electrical Properties for Al-Sb-Te Based Phase-Change Memory, ECS Solid State Letters 1 (2): 38, 2012.

28.   Kun Ren, Feng Rao, Zhitang Song, Shilong Lv, Yan Cheng, Liangcai Wu, Cheng Peng, Xilin Zhou, Mengjiao Xia, Bo Liu, and Songlin Feng. Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application, Applied Physics Letters 100: 052105, 2012.

29.   Feng Rao, Zhitang Song, Yan Cheng, Mengjiao Xia, Kun Ren, Liangcai Wu, Bo Liu, Songlin Feng. Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials, Acta Materialia 60: 323, 2011.

30.   Cheng Peng, Zhitang Song, Feng Rao, Liangcai Wu, Min Zhu, Hongjia Song, Bo Liu, Xilin Zhou, Dongning Yao, Pingxiong Yang, and Junhao Chu. Al1.3Sb3Te material for phase change memory application, Applied Physics Letters 99: 043105, 2011.

31.   Feng Rao, Zhitang Song, Kun Ren, Xilin Zhou, Yan Cheng, Liangcai Wu, and Bo Liu. Si-Sb-Te materials for phase change memory applications, Nanotechnology 22: 145702, 2011.

32.   Feng Rao, Kun Ren, Yifeng Gu, Zhitang Song, Liangcai Wu, Xilin Zhou, Bo Liu, Songlin Feng, and Bomy Chen. Nano composite Si2Sb2Te film for phase change memory, Thin Solid Films 519: 5684, 2011.

33.   Feng Rao, Zhitang Song, Kun Ren, Xuelai Li, Liangcai Wu, Wei Xi, and Bo Liu. Sn12Sb88 material for phase change memory, Applied Physics Letters 95: 032105, 2009.

34.   Feng Rao, Zhitang Song, Liangcai Wu, Yuefeng Gong, Songlin Feng, and Bomy Chen. Phase Change Memory Cell Based On Sb2Te3/TiN/Ge2Sb2Te5 Sandwich-Structure, Solid-State Electronics 53: 276, 2009.

35.   Feng Rao, Zhitang Song, Yuefeng Gong, LiangcaiWu, Songlin Feng, and Bomy Chen. Programming voltage reduction in phase change memory cells with tungsten trioxide bottom heating layer/electrode, Nanotechnology 19: 445706, 2008.

36.   Feng Rao, Zhitang Song, Ting Zhang, Yuefeng Gong, Liangcai Wu, Songlin Feng, and Bomy Chen. Polycrystalline Si-rich SiSbx bottom heating layer for phase change memory, Electrochemical and Solid-State Letters 11: H147, 2008.

37.   Feng Rao, Zhitang Song, Yuefeng Gong, Liangcai Wu, Bo Liu, Songlin Feng, and Bomy Chen. Phase change memory cell using tungsten trioxide bottom heating layer, Applied Physics Letters 92: 223507, 2008.

38.   Feng Rao, Zhitang Song, Liangcai Wu, Bo Liu, Songlin Feng, and Bomy Chen. Investigation on the stabilization of the median resistance state for phase change memory cell with doublelayer chalcogenide films, Applied Physics Letters 91: 123511, 2007.

39.   Feng Rao, Zhitang Song, Liangcai Wu, Min Zhong, Songlin Feng, and Bomy Chen. Phase change memory cell with an upper amorphous nitride silicon germanium heating layer, Applied Physics Letters 91: 073505, 2007.

40.   Feng Rao, Zhitang Song, Liangcai Wu, Songlin Feng, and Bomy Chen. Set and reset properties of phase change memory cells with double-layer chalcogenide films (Ge2Sb2Te5 and Sb2Te3), Journal of the Electrochemical Society 154: H999, 2007.

41.   Feng Rao, Zhitang Song, Min Zhong, Liangcai Wu, Gaoming Feng, Bo Liu, Songlin Feng, and Bomy Chen. Multilevel data storage characteristics of phase change memory cell with doublelayer chalcogenide films (Ge2Sb2Te5 and Sb2Te3), Japanese Journal of Applied Physics, Part 2: Letters 46: L25, 2007.


 

第一发明人授权专利

(1) 饶峰,任堃,宋志棠,任万春,用于替代DRAMFLASH的相变存储单元及其制作方法,2012.12.5-2032.9.1331CN201210339752.1,美国专利号US14/129955

(2) 饶峰,任堃,宋志棠,低功耗相变存储器用限制型电极结构及制备方法,2012.8.15-2032.5.1631CN201210152787.4

(3) 饶峰,夏梦姣,宋志棠,陈邦明,微控制器用低功耗嵌入式相变存储器及其相变存储材料与制备方法,2012.6.20-2031.12.2931CN201110453265.3

(4) 饶峰,宋志棠,吴良才,任堃,周夕淋,用于相变存储器的Si-Sb-Te材料,2011.7.20-2031.1.1931CN201110021605.5

(5) 饶峰,宋志棠,夏梦姣,一种DRAM相变存储单元及用于替代DRAM的相变存储器,2012.2.1-2031.6.1531CN201110160543.6

(6) 饶峰,任堃,宋志棠,低功耗相变存储器用环形电极结构及制备方法,2012.9.12-2032.5.1631CN201210154750.5

(7) 饶峰,任堃,宋志棠,吴良才,用于相变存储的相变材料及调节其相变参数的方法,2012.7.4-2030.12.3131CN201010619500.5


邮箱地址:fengrao@szu.edu.cn

 
 
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