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刘新科
职务:
职称: 讲师
分工:
办公电话: 0755-26534562
EMAIL: xkliu@szu.edu.cn

教师简介

刘新科(LIU XINKE) 博士 讲师


个人简历:

2008年于新加坡国立大学获得材料科学与工程荣誉学士学位,2012年获得新加坡国立大学技术管理认证,2013年获得新加坡国立大学电气与计算机工程博士学位。博士期间在新加坡国立大学Silicon Nano Device Lab. 担任研发工程师,从事氮化镓功率器件的研究工作。主要研究内容包括氮化镓材料本身的表面钝化技术,AlGaN/GaN HFETs的应力效应技术,和在硅基和非硅基上的CMOS兼容的高压氮化镓器件。已经成功发表击穿电压1400伏的CMOS兼容的高压氮化镓器件,发表国际学术论文/会议文章共50篇(International Electron Device MeetingIEEE Trans. Electron DevicesIEEE Electron Device Letters Journal of Applied Physics, Applied Physics LettersAdvanced Functional Materials, Scientific Report, Journal of Materials Chemistry A等)。首次提出通过类金刚石的应力效应提高AlGaN/GaN HFETs的电子迁移率和改变阈值电压,并成功发表在2010International Electron Device Meeting IEDM)。IEDM会议是半导体研究领域最具有权威的会议之一。于2012年和南洋理工大学、香港科技大学共同发表的有关CMOS兼容的800伏硅基AlGaN/GaN HFETs的文章(X.Liu et al APEX 5 066501 2012),其被Applied Physics Express评为20125月下载次数最多的20篇文章之一。氮化镓器件的应力效应技术和CMOS兼容硅基氮化镓技术被国外知名报刊Semiconductor Today 分别在201012月和20126月报到。


联系方式:

0755-26534562; xkliu@szu.edu.cn

广东省深圳市南山区南海大道3688,深圳大学材料学院F226


博士后、研究助理招聘:

招聘博士后、研究助理数名, 有兴趣可以直接联系xkliu@szu.edu.cn研究方向为本人研究领域。


对于优秀的本科生、研究生:

欢迎联系做挑战杯项目。对于非常优秀的本科生和研究生,本人推荐去世界名校(前30名)做进一步深造机会(攻读博士学位)。


新闻报道:

1. Semiconductor today (2017/2/1) "Gold-free vertical gallium nitride Schottky barrier diodes"

link: http://www.semiconductor-today.com/news_items/2017/feb/sinano_010217.shtml

2. Semiconductor today (2012/06/07) "Gold-free nitride MOS-HEMTs for CMOS compatibility"

Link: http://www.semiconductor-today.com/news_items/2012/JUNE/NUS_070612.html


研究领域:

1) 用于新能源高新技术领域的高迁移率氮化镓功率器件

2) 新型二维材料的制备及其器件研究;



主持项目(国家、省部、市、校):


2016-2019 深圳市基础布局项目;

2015-2018 国家青年科学基金项目;

2015-2017广东省省级科技计划项目;

2015-2017 教育部留学回国人员科研启动经费;

2015-2017 深圳市孔雀计划启动经费;

2015-2017 深圳大学校启动经费;

2015-2016 深圳大学材料学院市重点实验室开放基金



获奖情况

·  2016 “挑战杯”腾讯奖(研究生:何佳铸等)

·  2016第六届广东省大学生新材料大赛 二等奖”(研究生:何佳铸等)

·  2016 深圳大学“荔园优青”入选者

·  2015年大学生“挑战杯”特等奖(研究生:何佳铸、唐聃)

·  IEEE WIMNACT45 Best Poster Award 2015

·  孔雀计划B 类人才(深圳、中国 2014)

·  IEEE EDL Golden Reviewer 2013

·  Financial Award for attending SSDM2010 (Japan)

·  Dean’s List, AY 2007/2008, only selected top 5% undergraduate

·  Best Poster Award, 3rd MRS-S Conference on Advanced Materials, 2008

·  Recipient of 2004–2008 Keppel Undergraduate Scholarship Award


期刊文章:

1.       H.-C. Chin, M. Zhu, X. Liu, H.-K. Lee, L. Shi, L.-S. Tan, and Y.-C. Yeo*, “Silane-ammonia surface passivation for                   gallium arsenide surface-channel n-MOSFETs,”IEEE Electron Device Letters, vol. 30, no. 2, pp. 110-112, 2009.

2.       H.-C. Chin, X. Gong, X. Liu, and Y.-C. Yeo*, “Lattice mismatched In0.4Ga0.6As source/drain stressors with in situ doping for strained In0.53Ga0.47As channel n-MOSFETs,” IEEE Electron Device Letters, vol. 30, no. 8, pp. 805-807, 2009.

3.       H.-C. Chin, X. Liu, X. Gong, and Y.-C. Yeo*, “Silane and ammonia surface passivation technology for high mobility In0.53Ga0.47As MOSFETs,” IEEE Trans. Electron Devices, vol. 57, no. 5, pp. 973-979, 2010.

4.       X. Liu, H.-C. Chin, L. S. Tan, and Y.-C. Yeo*, “High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition,” IEEE Electron Device Letters, vol. 31, no. 1, pp. 8-10, 2010.

5.       X. Liu, H.-C. Chin, L. S. Tan, and Y.-C. Yeo*, “In situ surface passivation of gallium nitride for metal-organic chemical vapor deposition of high-permittivity gate dielectric,” IEEE Trans. Electron Devices, vol. 58, no. 1, pp. 95 - 102, 2011.

6.       X. Liu, B. Liu, E. K. F. Low, W. Liu, M. Yang, L.-S. Tan, K. L. Teo, and Y.-C. Yeo*, “Local stress induced by diamond-like carbon liner in AlGaN/GaN MOS-HEMTs and impact on electrical characteristics,” Applied Physics Letters, vol. 98, 183502, 2011.

7.       X. Liu, E. K. F. Low, J.-S. Pan, W. Liu, K. L. Teo, L. S. Tan, and Y.-C. Yeo*, “Impact of in situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors,” Applied Physics Letters, vol. 99, 093504, 2011.

8.       X. Liu, C. Zhan, K. W. Chan, W. Liu, L. S. Tan, K. J. Chen, and Y.-C. Yeo*, “AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm2 using a CMOS-compatible gold-free process,” Applied Physics Express, vol. 5, 066501, May, 2012. (also reported in Semiconductor TODAY on 7th June, 2012) (Top 20 most downloaded APEX paper in May, 2012)

9.       X. Liu, C. Zhan, K. W. Chan, M. H. S. Owen, W. Liu, D. Z. Chi, L. S. Tan, K. J. Chen, and Y.-C. Yeo*, “AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with a High Breakdown Voltage of 1400 V and on-state resistance of 22 mΩ•cm2 using a CMOS Compatible Gold-Free Process,” Japanese Journal of Applied Physics. vol. 52, no. 4, 04CF06, 2013.

10.    X. Liu, M. A. Bhuiyan, P. S/O Somasuntharam, C. B. Soh, Z. Liu, D. Z. Chi,W. Liu, W. Yu*, Y. Lu*, L. S. Tan,Y.-C. Yeo, “High Voltage AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors with RegrownIn0.14Ga0.86N Contact Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process,” Applied Physics Express, vol. 7, 126501, 2014.

11.    X. Liu*, Z. Liu, P. S/O Somasuntharam, J. Pan, W. Liu, F. Jia, Y. Lu, C. Liu,W. Yu, J. He, and L. S. Tan, “Band alignment of HfAlO/GaN (0001) determined by x-ray photoelectron spectroscopy: Effect of in situ SiH4 Passivation,” Journal of Alloys and Compounds, vol. 636, pp.191-195, 2015.

12.    C. Liu, J. Wen, W. Yu*, B. Zhang, Z. Xue, Y. Chang, L, Zhu, X. Liu*, Y. Zhao, M. Zhang, X. Wang, Q.-T. Zhao, “High Performance Strained Si0.5Ge0.5 Quantum-Well p-MOSFETs Fabricated Using a High-k/Metal-gate last Process,” Superlattices and Microstructures, vol. 83, pp. 2010-215, 2015.

13.    X. Liu, J. He, D. Tang, Q. Liu, J. Wen, W. Yu*, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, W. Liu, K.-W. Ang, and Z. He, “Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined byx-ray photoelectron spectroscopy,” Journal of Alloys and Compounds, vol. 650,pp.502-507, 2015.

14.    X.Liu, Y.Lu*, W. Yu*, J. Wu, J. He, D. Tang, Z. Liu, P. S/O Somasuntharam,D. Zhu, W. Liu, P. Cao, S. Han, S. Chen*, and L. S. Tan, “AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with PolarizedP(VDF-TrFE) Ferroelectric Polymer Gating,” Scientific Reports, vol. 5, 14092, 2015.

15.    S. Chen , F. Mo, S. Chen, Z. Ge, H. Yang, J. Zuo, X. Liu*, and H. Zhuo*, “New insights into multi-shape memory behaviours and liquid crystalline properties of supramolecular polyurethane complexes based on pyridine-containing polyurethane and 4-n-Octyldecyloxybenzoic acid,” Journal of Materials Chemistry A, vol. 3, pp. 19525-19538, 2015.

16.    X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu*, W. Yu*, D. Zhu,W.Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: Effect of CHF3 treatment,” Applied Physics Letter, vol. 107, 101601, 2015.

17.    X. Liu*, J. He, Q. Liu, D. Tang, J. Wen, W. Liu, W. Yu, J. Wu*, Z. He, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, and K.-W. Ang, “Low temperature carrier transport study of monolayer MoS2 field effect transistors prepared by chemical vapor deposition under an atmospheric pressure,” Journal of Applied Physics, vol. 118, 124506, 2015.

18.    X. Liu, K.-W Ang*, W. Yu, J. He, X. Feng, Q. Liu, H. Jiang, D. Tang, J.Wen, Y. Lu, W Liu, P. Cao, S. Han, J. Wu, W. Liu, X. Wang, D. Zhu*, and Z. He*, “Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature,” Scientific Reports, vol. 6, 24920, 2016.

19.    Z.-P. Ling, J.-T. Zhu, X. Liu*, and K.-W. Ang*, “Interface engineering for the enhancement of carrier transport in black phosphorus transistor with ultra-thin high-k gate dielectric,” Scientific Reports, vol. 6, 26609, 2016.

20.    X. Feng, V. V. Kulish, P. Wu, X. Liu, and K.-W. Ang*, “Anomalously enhanced thermal stability of phosphorene via metal adatoms doping: An experimental and first-principles study,” Nano Research, vol. 9, pp.2687-2695, 2016.

21.    X. Liu*, Y. Zhang, Q. Liu, J. He, L. Chen, K. Li, F. Jia, Y. Zeng, Y. Lu,W. Yu, D. Zhu, W. Liu*, J. Wu, Z. He, and K.-W. Ang, “Band alignment of ZnO/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy,” Applied Physics Letters, vol. 109, 071602, 2016.

22.    K. Li, K.-W.Ang, Y. Lv, and X. Liu*, “Effects of Al2O3 capping layers on the thermal properties of thin black phosphorus,” Applied Physics Letters, vol.109, 261901, 2016.

23.   S. Han*, S. M. Liu, W. J. Liu, P. J. Cao, Y. M. Lu*, Y. X. Zeng, F. Jia, X. Liu, D. L. Zhu, and S. C. Su, “Effect of Substrate Surface Atom Constitution and The Migration Characteristics of Reactive Atoms on Crystal Structure of MgxZn1−xO Thin Films Deposited by PLD Method,” The Journal of Physical Chemistry C, vol. 120, pp. 12568-12577, 2016.

24.    X. Liu*, Q. Liu, J. Wang, W. Yu, K. Xu, and J.-P. Ao*, “1.2 kV GaN Schottky BarrierDiodes on Free-Standing GaN Wafer using a CMOS-Compatible Contact Materials,” Japanese Journal of Applied Physics, vol. 56, 026501.2017.

25.    P. Xia, X. Feng, R. J. Ng, S. Wang, D. Chi, C. Li, Z. He, X. Liu, and K.-W.Ang*, “Impact and origin of interface states in MOS capacitor with monolayer MoS2 and HfO2 high-k dielectric,”Scientific Reports, vol. 7, 40669, 2017.

26.    X. Liu, L.Chen*, Q. Liu, J.He, K. Li, W. Yu, J.-P. Ao, and K.-W. Ang, “Band alignment of Atomic Layer Deposited TiO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy”, Journal of Alloys and Compounds, vol. 698, pp.141-146, 2017.

27.    X. Liu*, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He*, “Monolayer WxMo1-xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors”, Advanced Functional Materials, 1606469, 2017. 

28.    K.K. Tehare, S.S. Bhande, S. U. Mutkule, F. J. Stadler, J.-P. Ao, R. S. Mane*, and X. Liu*, “Low-temperature chemical synthesis of rutile and anatase mixed Phase TiO2 nanostructures for DSSCs photoanodes,” Journal of Alloys and Compounds, vol, 704, pp. 187-192, 2017.

29.  W. C. Tan, Y. Cai, R. Ng, L. Huang, X. Feng, G. Zhang, Y.-W. Zhang, C. A. Nijhuis, X. Liu, and K.-W. Ang*, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Advanced Materials, 29, 1700503,2017.

30.   W. Chen, S. Luo, Z. Wan, X. Feng, X. Liu, and Z. He*, “Ruthenium acetylacetonate in interface engineering for high performance planar hybrid perovskite solar cells,”Optics Express, vol. 25, no. 8, pp. A253-A263, 2017.

31.  S. Han, S.M. Liu, Y.M. Lu*, P.J. Cao, W.J. Liu, Y.X. Zeng, F. Jia, X. Liu, D.L. Zhu, “High performance solar-blind ultraviolet photo detector based on mixed-phase MgZnO thin film with different interfaces deposited by PLD method,” Journal of Alloys and Compounds, vol, 694, pp. 168-174, 2017.


会议文章

1.     X. Liu, C. K. Chia, M. Suryana, and Y. W. Zhang, “Ultra-wide band high reflectivity SiO2/SiNx distributed bragg reflector for broad band photonic devices,” 3rd MRS-Singapore Conference on Advanced Material, Singapore, Feb. 25-27, 2008.

2.     H.-C. Chin, M. Zhu, Z.-C. Lee, X. Liu, K.-M. Tan, H. K. Lee, L. Shi, L.-J. Tang, C.-H. Tung, L.-S. Tan, and Y.-C. Yeo, “A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel GaAs n-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack,” IEEE International Electron Device Meeting 2008, San Francisco CA, Dec. 15-17, 2008, pp. 383-386.

3.     H.-C. Chin, Z. Lin, X. Liu, L.-S. Tan, and Y.-C. Yeo, “Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts,” International Symposium on VLSI Technology, Systems and Applications, Hsinchu, Taiwan, Apr. 27-29, 2009, pp. 143-144.

4.     H.-C. Chin, X. Gong, X. Liu, Z. Lin, and Y.-C. Yeo, “Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering,” Symp. on VLSI Tech. 2009, Kyoto, Japan, Jun. 15-18, 2009, pp. 244-245.

5.     X. Liu, H.-C. Chin, L. S. Tan, and Y.-C. Yeo, “Metal-gate/high-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition,” International Conference on Solid State Devices and Materials, Sendai, Japan, Oct. 7-9, 2009, pp. 1214-1215.

6.     X. Liu, H.-C. Chin, E. K. F. Low, W. Liu, L. S. Tan, and Y.-C. Yeo, “In situ silane surface passivation for gate-first undoped AlGaN/GaN HEMTs with minimum current collapse and high-permittivity dielectric,” International Conference on Solid State Devices and Materials, Tokyo, Japan, Sep. 22-24, 2010, pp. 141-142.

7.     X. Liu, B. Liu, E. K. F. Low, H.-C. Chin, W. Liu, M. Yang, L. S. Tan, and Y.-C. Yeo, “Diamond-like carbon (DLC) liner with high compressive stress formed on AlGaN/GaN MOS-HEMTs with in situ silane surface passivation for performance enhancement,” IEEE International Electron Device Meeting 2010, San Francisco CA, Dec. 6-8, 2010, pp. 261-264. (also reported in Semiconductor TODAY , vol. 5, issue 10, December 2010)

8.     X. Liu, C. Zhan, K. W. Chan, W. Liu, L. S. Tan, K. L. Teo, K. J. Chen, and Y.-C. Yeo, “AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm2 using a CMOS-compatible gold-free process,” International Symposium on VLSI Technology, Systems and Applications, Hsinchu, Taiwan, Apr. 23-25, 2012.

9.     X. Liu, C. Zhan, K. W. Chan, W. Liu, D. Z. Chi, L. S. Tan, K. J. Chen, and Y.-C. Yeo, “AlGaN/GaN-on-sapphire MOS-HEMTs with breakdown voltage of 1400 V and on-state resistance of 22 mΩ.cm2 using a CMOS-compatible gold-free process,” International Conference on Solid-State Devices and Materials, Kyoto, Japan, Sep. 25-27, 2012, pp. 879-880.

10.   S. S. Pannirselvam, X. Liu, Y.-C. Yeo, and L. S. Tan, “Effects of in situ surface passivation of AlGaN/GaN MOS-HEMT: A simulation study,” International Conference on Solid-State Devices and Materials, Kyoto, Japan, Sep. 25 - 27, 2012, pp. 176-177.

11.   X. Liu, “High Voltage AlGaN/GaN MOS-HEMTs with a CMOS compatible Gold-free process,” Energy Materials Nanotechnology, Chendu, China, Sep. 22-25, 2014.

12.    X. Liu and H. Y. Yu, “High voltage AlGaN/GaN MOS-HEMTs with CMOS-compatible gold-free process,” International Conference on Solid-State and Integrated Circuit Technology, Guilin, China, Oct. 28-31, 2014.

13.      刘新科*、何佳铸、俞文杰、吕有明、贾芳、曾玉祥、韩舜、曹培江、柳文军、朱德亮, “具有InGaN再生长源/漏的800伏高压AlGaN/GaN MOS-HEMTs,” 第七届全国ZnO学术会议,816-18日,2015。

14.   Jiazhu He, Xinke Liu*, Youming Lu, Wenjie Yu, Jing Wu, and Leng Seow Tan, “AlGaN/GaN MOS-HEMTs with polarized P(VDF-TrFE) Ferroelectric Polymer Gating,” 第一届全国宽禁带半导体学术及应用技术会议,pp.135-136, 苏州,1030-112日,2015.

15.    [Invited Paper] K.-W. Ang, and X. Liu, “2D layered semiconductor for next generation nanoelectronics applications,” 2015 Energy Materials Nanotechnology (EMN) Fall Meeting, Las Vegas, USA, Nov. 16-19, 2015.

16.    [Invited Paper] K.-W. Ang, and X. Liu, “Two-dimensional materials and devices for ubiquitous electronic applications,” 2nd Annual World Congress of Smart Materials - 2016 (WCSM 2016), Singapore, Mar. 4-6, 2016.

17.    X. Liu, J.-P. Ao, J. He, J. Wang, W. Yu, and K. Xu, “1200 V GaN schottky barrier diode on 2” free-standing wafer using a CMOS-Compatible gold-free process,” 10th International Conference on New Diamond and Nano Carbons, Xi’an China, May 22-26, 2016.

18.   Z.-P. Ling, X. Feng, H. Jiang, Z. He, X. Liu,* and K.-W. Ang*, “Black phosphorus transistors with enhanced hole transport and subthreshold swing using ultra-thin HfO2 high-k gate dielectric,” IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, Hawaii, USA, Jun. 12-13, 2016.

19.    陈乐, 刘新科*,李奎龙,敖金平,何佳铸,王建峰,俞文杰,徐科, “高性能自支撑GaN肖特基二极管,” 第十四届全国 MOCVD 学术会议, 吉林延边, 8月16-19日,2016。

20.    何佳铸,陈乐,李奎龙,刘新科*,吕有明*,“二维材料MoS2的制备及其器件的研究,” 第十四届全国 MOCVD 学术会议, 吉林延边, 8月16-19日,2016。

21.    李奎龙,何佳铸,陈乐,刘新科*,董建荣*,吕有明,“晶格异变Ga1-xInxP(x=0.48~0.78)过渡层的生长与应力弛豫研究,” 第十四届全国 MOCVD 学术会议, 吉林延边, 8月16-19日,2016。

22.   P. Xia, S. Wang, D. Chi, C. Li, Z. He, X. Liu*, and K.-W. Ang*, “The physical origin of interface states and its influence on MOSCAP with magnetron sputtered MoS2 and HfO2 high-k gate dielectric,” 2016 International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, Sep. 26-29, 2016.

23.   C. Li, Z. Huang, J. Wang, K. Xu, J.-P. Ao, and X. Liu*, “Vertical GaN Schottky barrier diodes with record high current Ion/Ioff Ratio (~2.3×1010)on free-standing GaN wafer,” Materials Research Society (MRS) Spring Meeting, Arizona, USA, Apr. 17-21, 2017.

24.  X. Feng, V. V. Kulish, P. Wu, X. Liu, and K.-W. Ang, “Adatoms Doping Effects on the Thermal Stability of Black Phosphorus formed on High-k Gate Dielectric,” Materials Research Society (MRS) Spring Meeting, Arizona, USA, Apr. 17-21, 2017.


专利

1.     刘新科,何佳铸,刘强,俞文杰,吕有明,陈凌霄,杨育佳,一种氮化镓异质结场效应晶体管ZL201520678062.8

2.     刘新科,刘强,何佳铸,俞文杰,韩舜,曹培江,柳文军,曾玉祥, 贾芳,朱德亮,吕有明,具有应力结构的二硫化钼薄膜场效应晶体管 ZL201520729820.4

3.    刘新科,何佳铸,刘强, 俞文杰, 吕有明,韩舜,曹培江,柳文军,曾玉祥,贾芳,朱德亮,一种新型鳍式场效应晶体管, ZL201520915736.1

4.    刘新科, 何佳铸, 吕有明, 韩舜, 曹培江, 柳文军, 曾玉祥, 贾芳, 朱德亮, 一种二硫化钼薄膜的制备方法及二硫化钼薄膜, PCT/CN2015/099600

5.    刘新科、何佳铸、刘强、吕有明、俞文杰、韩舜、曹培江、柳文军、曾玉祥、贾芳、朱德亮, 一种硫化钨薄膜及其制备方法, PCT/CN2016/077550


 
 
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